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KF3N80D-VB Product details
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Product Introduction – KF3N80D-VB
The KF3N80D-VB is a high voltage N-channel MOSFET in a TO252 package with 800V drain-source voltage (VDS) and ±30V gate-source voltage (VGS), which is ideal for applications requiring high voltage blocking capability. Based on SJ_Multi-EPI technology, this device has an on-resistance (RDS(ON)) of 2600mΩ @ VGS=10V and a continuous drain current (ID) of 2A, suitable for high-efficiency and durable power conversion applications.
The KF3N80D-VB is a high voltage N-channel MOSFET in a TO252 package with 800V drain-source voltage (VDS) and ±30V gate-source voltage (VGS), which is ideal for applications requiring high voltage blocking capability. Based on SJ_Multi-EPI technology, this device has an on-resistance (RDS(ON)) of 2600mΩ @ VGS=10V and a continuous drain current (ID) of 2A, suitable for high-efficiency and durable power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description – KF3N80D-VB
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
- **Continuous drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Maximum power dissipation**: Determined by specific application and heat dissipation conditions
- **Operating temperature range**: -55°C to 150°C
- **Package pin configuration**: Standard TO252 package, easy for PCB installation
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
- **Continuous drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Maximum power dissipation**: Determined by specific application and heat dissipation conditions
- **Operating temperature range**: -55°C to 150°C
- **Package pin configuration**: Standard TO252 package, easy for PCB installation
Domain and module applications：
Application fields and module examples
1. **Power converter**
KF3N80D-VB is suitable for power switch applications in high-voltage switch mode power supplies (SMPS) and AC-DC converters due to its high voltage capability and low leakage current characteristics. It can work effectively under high voltage input environment and ensure conversion efficiency.
2. **LED lighting driver**
In LED lighting driver modules, this MOSFET can be used as a high-voltage switching element. Its 800V withstand voltage characteristic enables it to withstand higher voltage spikes, ensuring that the LED driver can operate stably under harsh power supply conditions.
3. **Industrial control**
KF3N80D-VB is suitable for use in high-voltage control modules in industrial automation, such as motor drive controllers, inverters and other applications. In these modules, it provides reliable current control capabilities and can work in harsh environments for a long time.
4. **Power Regulator**
It also has advantages in power regulation modules, especially in scenarios requiring high voltage blocking and good switching characteristics, which can help the system improve power management efficiency and reduce energy loss.
The high voltage and high-efficiency switching characteristics of KF3N80D-VB make it an ideal choice for high-voltage field applications that require both reliability and efficiency.
1. **Power converter**
KF3N80D-VB is suitable for power switch applications in high-voltage switch mode power supplies (SMPS) and AC-DC converters due to its high voltage capability and low leakage current characteristics. It can work effectively under high voltage input environment and ensure conversion efficiency.
2. **LED lighting driver**
In LED lighting driver modules, this MOSFET can be used as a high-voltage switching element. Its 800V withstand voltage characteristic enables it to withstand higher voltage spikes, ensuring that the LED driver can operate stably under harsh power supply conditions.
3. **Industrial control**
KF3N80D-VB is suitable for use in high-voltage control modules in industrial automation, such as motor drive controllers, inverters and other applications. In these modules, it provides reliable current control capabilities and can work in harsh environments for a long time.
4. **Power Regulator**
It also has advantages in power regulation modules, especially in scenarios requiring high voltage blocking and good switching characteristics, which can help the system improve power management efficiency and reduce energy loss.
The high voltage and high-efficiency switching characteristics of KF3N80D-VB make it an ideal choice for high-voltage field applications that require both reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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