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KF3N50FZ-VB Product details
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KF3N50FZ-VB MOSFET Product Introduction:
KF3N50FZ-VB is a unipolar N-channel power MOSFET designed for high voltage switching applications. Its maximum drain-source voltage (VDS) is 650V and the gate-source voltage (VGS) is rated at ±30V, making it ideal for high voltage circuits that require reliable switching. The threshold voltage (Vth) is 3.5V, ensuring efficient gate control, while the RDS(ON) is 2560mΩ at VGS=10V, which can minimize conduction losses in medium current operation. The MOSFET has a current handling capability (ID) of 4A and is manufactured using planar technology, suitable for consistent performance and strong switching transition handling capabilities.
KF3N50FZ-VB is a unipolar N-channel power MOSFET designed for high voltage switching applications. Its maximum drain-source voltage (VDS) is 650V and the gate-source voltage (VGS) is rated at ±30V, making it ideal for high voltage circuits that require reliable switching. The threshold voltage (Vth) is 3.5V, ensuring efficient gate control, while the RDS(ON) is 2560mΩ at VGS=10V, which can minimize conduction losses in medium current operation. The MOSFET has a current handling capability (ID) of 4A and is manufactured using planar technology, suitable for consistent performance and strong switching transition handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package**: TO220F
- Fully insulated package that provides good heat dissipation and provides electrical isolation between the MOSFET and the heat sink, suitable for high voltage applications.
2. **Configuration**: Unipolar N-channel
- A simple and easy-to-use configuration where the N-channel MOSFET is the main switch.
3. **VDS (Drain-Source Voltage)**: 650V
- The MOSFET can withstand drain-source voltages up to 650V, suitable for high voltage power circuits.
4. **VGS (Gate-Source Voltage)**: ±30V
- Gate-source voltage limitation allows operation in environments where the control voltage may fluctuate.
5. **Vth (Threshold Voltage)**: 3.5V
- The MOSFET requires a gate-source voltage of 3.5V to turn on, making it responsive to standard control logic.
6. **RDS(ON) (On-Resistance)**: 2560mΩ @ VGS=10V
- The relatively high on-resistance means that the device is more suitable for low-power loads and for use in situations where high efficiency is not the primary goal.
7. **ID (Continuous Drain Current)**: 4A
- The MOSFET can handle up to 4A of continuous current, making it suitable for medium current switching applications.
8. **Technology**: Planar Technology
- Planar MOSFET technology is known for its simplicity and reliability, and is particularly suitable for applications where switching speed is not a priority.
1. **Package**: TO220F
- Fully insulated package that provides good heat dissipation and provides electrical isolation between the MOSFET and the heat sink, suitable for high voltage applications.
2. **Configuration**: Unipolar N-channel
- A simple and easy-to-use configuration where the N-channel MOSFET is the main switch.
3. **VDS (Drain-Source Voltage)**: 650V
- The MOSFET can withstand drain-source voltages up to 650V, suitable for high voltage power circuits.
4. **VGS (Gate-Source Voltage)**: ±30V
- Gate-source voltage limitation allows operation in environments where the control voltage may fluctuate.
5. **Vth (Threshold Voltage)**: 3.5V
- The MOSFET requires a gate-source voltage of 3.5V to turn on, making it responsive to standard control logic.
6. **RDS(ON) (On-Resistance)**: 2560mΩ @ VGS=10V
- The relatively high on-resistance means that the device is more suitable for low-power loads and for use in situations where high efficiency is not the primary goal.
7. **ID (Continuous Drain Current)**: 4A
- The MOSFET can handle up to 4A of continuous current, making it suitable for medium current switching applications.
8. **Technology**: Planar Technology
- Planar MOSFET technology is known for its simplicity and reliability, and is particularly suitable for applications where switching speed is not a priority.
Domain and module applications：
Application Examples:
1. **Power Supply for Consumer Electronics**:
The KF3N50FZ-VB MOSFET can be used in low-power AC-DC converters, especially in the PFC (Power Factor Correction) or output rectification stage of small to medium-sized power supplies. For example, in desktop power adapters or LCD TV power boards, the device's high VDS rating ensures reliable operation in high-voltage switches.
2. **Motor Drive Control for Home Appliances**:
Due to its 650V VDS rating, this MOSFET is suitable for motor control applications in home appliances such as washing machines or refrigerators. The MOSFET can be used in the inverter circuit of such equipment to drive motors with medium power requirements.
3. **Lighting Systems**:
In lighting ballasts for industrial or outdoor LED lighting systems, the KF3N50FZ-VB MOSFET can be used to control high-voltage switch operations, especially in environments where efficiency and size constraints are not as stringent as those for efficient lighting.
4. **HVAC Systems**:
This MOSFET can be implemented in heating, ventilation and air conditioning (HVAC) systems for switching high voltage loads with medium current demands. It may be part of a control module that manages compressors and fan motors.
5. **Industrial Power Inverters**:
In small industrial inverters that do not require ultra-high efficiency but need to handle high voltages, the KF3N50FZ-VB MOSFET manages the switching operations in the inverter circuit, providing a reliable option for medium power applications.
This MOSFET is ideal for applications that require cost-effectiveness and robustness at high voltages, rather than minimizing losses or fast switching at ultra-high frequencies.
1. **Power Supply for Consumer Electronics**:
The KF3N50FZ-VB MOSFET can be used in low-power AC-DC converters, especially in the PFC (Power Factor Correction) or output rectification stage of small to medium-sized power supplies. For example, in desktop power adapters or LCD TV power boards, the device's high VDS rating ensures reliable operation in high-voltage switches.
2. **Motor Drive Control for Home Appliances**:
Due to its 650V VDS rating, this MOSFET is suitable for motor control applications in home appliances such as washing machines or refrigerators. The MOSFET can be used in the inverter circuit of such equipment to drive motors with medium power requirements.
3. **Lighting Systems**:
In lighting ballasts for industrial or outdoor LED lighting systems, the KF3N50FZ-VB MOSFET can be used to control high-voltage switch operations, especially in environments where efficiency and size constraints are not as stringent as those for efficient lighting.
4. **HVAC Systems**:
This MOSFET can be implemented in heating, ventilation and air conditioning (HVAC) systems for switching high voltage loads with medium current demands. It may be part of a control module that manages compressors and fan motors.
5. **Industrial Power Inverters**:
In small industrial inverters that do not require ultra-high efficiency but need to handle high voltages, the KF3N50FZ-VB MOSFET manages the switching operations in the inverter circuit, providing a reliable option for medium power applications.
This MOSFET is ideal for applications that require cost-effectiveness and robustness at high voltages, rather than minimizing losses or fast switching at ultra-high frequencies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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