KF11N50F-VB Product details
Product introduction:
KF11N50F-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 550V, and the gate-source voltage (VGS) is ±30V, with good safety margin and operating stability. The threshold voltage (Vth) of the device is 3V, and the on-resistance (RDS(ON)) is 260mΩ when VGS is 10V, which can effectively reduce conduction losses and improve energy efficiency. The maximum drain current (ID) of KF11N50F-VB is 18A, and the use of planar technology (Plannar) makes it perform well in high-frequency applications and suitable for various power management and switching applications.
**2. KF11N50F-VB
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Maximum drain-source voltage (VDS)**: 550V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- @ VGS=10V: 260mΩ
7. **Maximum drain current (ID)**: 18A
8. **Maximum power dissipation (Ptot)**: 70W
9. **Operating temperature range**: -55°C to 150°C
10. **Technology**: Plannar technology, suitable for high voltage and high performance applications
11. **Maximum pulse drain current (IDM)**: 36A
**Three,
Domain and module applications:
1. **Switching Power Supply (SMPS)**: KF11N50F-VB is widely used in switching power supplies and adapters. Its high voltage capability and low on-resistance make it play an important role in high-efficiency power conversion, which can improve the overall conversion efficiency, reduce heat generation, and extend the life of the equipment.
2. **Industrial Control**: This MOSFET is suitable for motor drive and servo systems in industrial control systems. Its high voltage and high current capabilities enable it to operate reliably in a variety of industrial equipment and meet the requirements of harsh working environments.
3. **Lighting Control**: KF11N50F-VB can be used in LED drive and intelligent lighting control modules. By controlling the driving current of the LED, the device can achieve efficient and stable lighting effects, especially suitable for occasions requiring dimming and intelligent control.
4. **High-voltage Switching Applications**: This MOSFET is also suitable for use in high-voltage switching circuits, such as power protection and circuit isolation. It can withstand drain-source voltages up to 550V, providing effective protection and control for the power system.
KF11N50F-VB has become an ideal choice for modern high-voltage power management and industrial control fields due to its superior electrical characteristics and wide application applicability, providing reliable performance and high energy efficiency for various applications.
Technical support:
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