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KF10N65F-VB Product details
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KF10N65F-VB is a high-performance N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) reaches 650V, which can operate stably in high voltage environment. The maximum drain current (ID) of this device is 10A, which is suitable for a variety of power supplies and switching circuits. The RDS(ON) of KF10N65F-VB is 830mΩ at VGS of 10V, showing a low on-resistance, which helps to reduce power consumption and heat generation. This MOSFET adopts Plannar technology to ensure its good electrical characteristics and reliability, making it excel in various power electronics applications.
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KF10N65F-VB is a high-performance N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) reaches 650V, which can operate stably in high voltage environment. The maximum drain current (ID) of this device is 10A, which is suitable for a variety of power supplies and switching circuits. The RDS(ON) of KF10N65F-VB is 830mΩ at VGS of 10V, showing a low on-resistance, which helps to reduce power consumption and heat generation. This MOSFET adopts Plannar technology to ensure its good electrical characteristics and reliability, making it excel in various power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package:** TO220F, with good heat dissipation, suitable for high-power applications, easy to install and connect.
- **Configuration:** Single N-channel, suitable for power switches and control circuits, allowing current to flow from the drain to the source.
- **VDS (drain-source voltage):** 650V, represents the maximum voltage between the drain and the source that the MOSFET can withstand in the off state, suitable for high-voltage environments.
- **VGS (gate-source voltage):** ±30V, refers to the maximum gate voltage (positive and negative directions) that the MOSFET can withstand, providing flexible gate drive capabilities.
- **Vth (threshold voltage):** 3.5V, represents the minimum gate-source voltage required to turn on the MOSFET, ensuring reliable switching performance.
- **RDS(ON) (on-resistance):** 830mΩ @ VGS=10V, represents the resistance between the drain and the source in the on state, affecting the conduction loss and overall efficiency.
- **ID (drain current):** 10A, refers to the maximum continuous drain current that the MOSFET can withstand, suitable for medium load applications.
- **Technology:** Plannar technology improves the electrical characteristics and thermal performance of the device, improving efficiency and reliability.
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- **Package:** TO220F, with good heat dissipation, suitable for high-power applications, easy to install and connect.
- **Configuration:** Single N-channel, suitable for power switches and control circuits, allowing current to flow from the drain to the source.
- **VDS (drain-source voltage):** 650V, represents the maximum voltage between the drain and the source that the MOSFET can withstand in the off state, suitable for high-voltage environments.
- **VGS (gate-source voltage):** ±30V, refers to the maximum gate voltage (positive and negative directions) that the MOSFET can withstand, providing flexible gate drive capabilities.
- **Vth (threshold voltage):** 3.5V, represents the minimum gate-source voltage required to turn on the MOSFET, ensuring reliable switching performance.
- **RDS(ON) (on-resistance):** 830mΩ @ VGS=10V, represents the resistance between the drain and the source in the on state, affecting the conduction loss and overall efficiency.
- **ID (drain current):** 10A, refers to the maximum continuous drain current that the MOSFET can withstand, suitable for medium load applications.
- **Technology:** Plannar technology improves the electrical characteristics and thermal performance of the device, improving efficiency and reliability.
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Domain and module applications：
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1. **High-voltage power supply:** The KF10N65F-VB is suitable for **high-voltage switching power supplies**, such as AC-DC converters and DC-DC converters. In these applications, the 650V VDS and 10A ID enable it to efficiently handle larger power loads, ensuring the stability and efficiency of the power supply.
2. **Motor drive:** This MOSFET can be used in **motor drive circuits**, suitable for start-stop control and speed regulation applications of various types of motors. Its high voltage capability and medium current handling capability make the KF10N65F-VB an efficient solution in motor control.
3. **Inverter:** The KF10N65F-VB is also suitable for **inverter** applications, especially in solar inverters, to convert DC power into AC power. Its high voltage and current capabilities ensure that the inverter can operate reliably under high load conditions, thereby improving the overall energy conversion efficiency.
4. **LED lighting:** In addition, this MOSFET can also be used in **LED drive circuits** to provide stable current control for high-power LEDs. At high currents, the low on-resistance of 830mΩ ensures excellent thermal management and energy efficiency, making it an excellent performer in the field of LED lighting.
In summary, the KF10N65F-VB MOSFET demonstrates its excellent performance in high voltage and medium current applications, and is an indispensable component in various power electronic devices.
1. **High-voltage power supply:** The KF10N65F-VB is suitable for **high-voltage switching power supplies**, such as AC-DC converters and DC-DC converters. In these applications, the 650V VDS and 10A ID enable it to efficiently handle larger power loads, ensuring the stability and efficiency of the power supply.
2. **Motor drive:** This MOSFET can be used in **motor drive circuits**, suitable for start-stop control and speed regulation applications of various types of motors. Its high voltage capability and medium current handling capability make the KF10N65F-VB an efficient solution in motor control.
3. **Inverter:** The KF10N65F-VB is also suitable for **inverter** applications, especially in solar inverters, to convert DC power into AC power. Its high voltage and current capabilities ensure that the inverter can operate reliably under high load conditions, thereby improving the overall energy conversion efficiency.
4. **LED lighting:** In addition, this MOSFET can also be used in **LED drive circuits** to provide stable current control for high-power LEDs. At high currents, the low on-resistance of 830mΩ ensures excellent thermal management and energy efficiency, making it an excellent performer in the field of LED lighting.
In summary, the KF10N65F-VB MOSFET demonstrates its excellent performance in high voltage and medium current applications, and is an indispensable component in various power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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