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K9A60D-VB Product details
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Product Introduction - K9A60D-VB MOSFET
K9A60D-VB is a **single N-channel MOSFET** in **TO220F package**, designed for high voltage and high current applications, especially in the field of power electronics. The **drain-source voltage (VDS)** of this MOSFET is as high as **650V**, which can handle a variety of high voltage applications, and its **gate-source voltage (VGS)** is **±30V**, ensuring its stability under a wide range of working conditions. The **threshold voltage (Vth)** of K9A60D-VB is **3.5V**, which can be turned on quickly under appropriate gate voltage. The **on-resistance (RDS(ON))** of this device is **680mΩ** (at a gate voltage of 10V), which reduces power loss while ensuring current passing, and its maximum drain current is **12A**. K9A60D-VB adopts **planar technology (Plannar), providing reliable performance and wide application adaptability.
K9A60D-VB is a **single N-channel MOSFET** in **TO220F package**, designed for high voltage and high current applications, especially in the field of power electronics. The **drain-source voltage (VDS)** of this MOSFET is as high as **650V**, which can handle a variety of high voltage applications, and its **gate-source voltage (VGS)** is **±30V**, ensuring its stability under a wide range of working conditions. The **threshold voltage (Vth)** of K9A60D-VB is **3.5V**, which can be turned on quickly under appropriate gate voltage. The **on-resistance (RDS(ON))** of this device is **680mΩ** (at a gate voltage of 10V), which reduces power loss while ensuring current passing, and its maximum drain current is **12A**. K9A60D-VB adopts **planar technology (Plannar), providing reliable performance and wide application adaptability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description - K9A60D-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS=10V
- **Continuous drain current (ID)**: 12A
- **Technology type**: Planar technology (Plannar)
- **Operating temperature range**: -55°C ~ 150°C
- **Maximum power consumption (Ptot)**: 60W (at 25°C environment)
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS=10V
- **Continuous drain current (ID)**: 12A
- **Technology type**: Planar technology (Plannar)
- **Operating temperature range**: -55°C ~ 150°C
- **Maximum power consumption (Ptot)**: 60W (at 25°C environment)
Domain and module applications：
Applications and modules
1. **High-voltage power converters**:
The K9A60D-VB is particularly suitable for **high-voltage DC-DC converters**, which can efficiently convert electrical energy in high-voltage environments. The 650V drain-source voltage makes it well adaptable in power conversion systems and is very suitable for applications such as power modules and power adapters.
2. **Electric vehicle charging systems**:
This MOSFET also has important applications in **electric vehicle chargers** and battery management systems. Its high voltage and current handling capabilities can meet the efficient energy transmission during the charging process and ensure stability and safety under various working conditions.
3. **Industrial motor drives**:
The K9A60D-VB is suitable for **industrial motor control systems**, especially in high-voltage drive applications. With its stable conduction characteristics and low conduction losses, this MOSFET can be used to drive high-voltage motors, ensuring the efficiency and reliability of the motor during operation.
4. **Inverters and Rectifiers**:
This device is also commonly used in **inverter and rectifier** systems, such as solar inverters and uninterruptible power supplies (UPS). The high voltage capability and reliability of the K9A60D-VB enable it to achieve high efficiency in the energy conversion process and effectively cope with different load conditions.
In summary, the K9A60D-VB MOSFET is suitable for multiple high-voltage power conversion and management fields, including high-voltage power converters, electric vehicle charging systems, industrial motor drives, and inverters and rectifiers. It can meet the stringent requirements of these systems for high voltage and high efficiency.
1. **High-voltage power converters**:
The K9A60D-VB is particularly suitable for **high-voltage DC-DC converters**, which can efficiently convert electrical energy in high-voltage environments. The 650V drain-source voltage makes it well adaptable in power conversion systems and is very suitable for applications such as power modules and power adapters.
2. **Electric vehicle charging systems**:
This MOSFET also has important applications in **electric vehicle chargers** and battery management systems. Its high voltage and current handling capabilities can meet the efficient energy transmission during the charging process and ensure stability and safety under various working conditions.
3. **Industrial motor drives**:
The K9A60D-VB is suitable for **industrial motor control systems**, especially in high-voltage drive applications. With its stable conduction characteristics and low conduction losses, this MOSFET can be used to drive high-voltage motors, ensuring the efficiency and reliability of the motor during operation.
4. **Inverters and Rectifiers**:
This device is also commonly used in **inverter and rectifier** systems, such as solar inverters and uninterruptible power supplies (UPS). The high voltage capability and reliability of the K9A60D-VB enable it to achieve high efficiency in the energy conversion process and effectively cope with different load conditions.
In summary, the K9A60D-VB MOSFET is suitable for multiple high-voltage power conversion and management fields, including high-voltage power converters, electric vehicle charging systems, industrial motor drives, and inverters and rectifiers. It can meet the stringent requirements of these systems for high voltage and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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