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K973-VB Product details
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：**
K973-VB is a high-efficiency single-channel N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Under the conditions of gate-source voltage of 4.5V and 10V, its on-resistance (RDS(ON)) is 85mΩ and 73mΩ respectively, and the maximum drain current (ID) is 18A. K973-VB adopts Trench technology, has excellent switching characteristics and thermal performance, and is very suitable for high-frequency and high-efficiency power management applications.
**2. K973-VB
K973-VB is a high-efficiency single-channel N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Under the conditions of gate-source voltage of 4.5V and 10V, its on-resistance (RDS(ON)) is 85mΩ and 73mΩ respectively, and the maximum drain current (ID) is 18A. K973-VB adopts Trench technology, has excellent switching characteristics and thermal performance, and is very suitable for high-frequency and high-efficiency power management applications.
**2. K973-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
：**
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Maximum drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 18A
8. **Maximum power dissipation (Ptot)**: 45W
9. **Operating temperature range**: -55°C to 150°C
10. **Technology**: Trench technology, suitable for high frequency and high efficiency applications
11. **Maximum pulse drain current (IDM)**: 30A
**Three,
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Maximum drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 18A
8. **Maximum power dissipation (Ptot)**: 45W
9. **Operating temperature range**: -55°C to 150°C
10. **Technology**: Trench technology, suitable for high frequency and high efficiency applications
11. **Maximum pulse drain current (IDM)**: 30A
**Three,
Domain and module applications：
：**
1. **DC-DC Converters**: K973-VB is ideal for use in DC-DC converters, especially in buck and boost converter circuits. Its low on-resistance and high current carrying capacity improve energy efficiency and reduce heat loss.
2. **Power Management Systems**: In power management modules, this MOSFET can be used in applications such as switch mode power supplies (SMPS), adapters, and battery chargers. Its efficient switching characteristics and good thermal performance enable it to meet the requirements of modern electronic devices for high efficiency and miniaturization.
3. **Electric Vehicles**: K973-VB is also widely used in electric vehicles and their charging systems. Due to its high current and voltage resistance, this MOSFET can achieve efficient energy transmission and conversion in motor drives and battery management systems.
4. **LED Drive Circuits**: This MOSFET is suitable for LED lighting applications, including LED drive circuits and intelligent lighting systems. By efficiently controlling LEDs, K973-VB can improve the energy efficiency and reliability of lighting systems.
With its excellent electrical performance and wide application applicability, K973-VB has become an ideal choice for modern power management and high-efficiency systems, meeting the needs of various high-frequency and high-efficiency applications.
1. **DC-DC Converters**: K973-VB is ideal for use in DC-DC converters, especially in buck and boost converter circuits. Its low on-resistance and high current carrying capacity improve energy efficiency and reduce heat loss.
2. **Power Management Systems**: In power management modules, this MOSFET can be used in applications such as switch mode power supplies (SMPS), adapters, and battery chargers. Its efficient switching characteristics and good thermal performance enable it to meet the requirements of modern electronic devices for high efficiency and miniaturization.
3. **Electric Vehicles**: K973-VB is also widely used in electric vehicles and their charging systems. Due to its high current and voltage resistance, this MOSFET can achieve efficient energy transmission and conversion in motor drives and battery management systems.
4. **LED Drive Circuits**: This MOSFET is suitable for LED lighting applications, including LED drive circuits and intelligent lighting systems. By efficiently controlling LEDs, K973-VB can improve the energy efficiency and reliability of lighting systems.
With its excellent electrical performance and wide application applicability, K973-VB has become an ideal choice for modern power management and high-efficiency systems, meeting the needs of various high-frequency and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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