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K960-MR-VB Product details
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Product Introduction - K960-MR-VB MOSFET
The K960-MR-VB is a **single N-channel MOSFET** in a **TO220F package**, designed for high voltage applications and suitable for the field of power electronics. With a **drain-source voltage (VDS)** of up to **950V**, this MOSFET can handle extremely high voltages, making it an ideal choice for applications that require high voltage control. Its **gate-source voltage (VGS)** is **±30V**, ensuring stable operation over a wide gate voltage range. The **threshold voltage (Vth)** of the K960-MR-VB is **3.5V**, enabling fast turn-on at an appropriate gate voltage. Its **on-resistance (RDS(ON))** is **2400mΩ** (at a gate voltage of 10V), which is relatively high, but still provides effective turn-on performance in high voltage applications, with a maximum drain current of **6A**. This MOSFET uses **planar technology (Plannar)** and is suitable for a variety of power electronics applications.
The K960-MR-VB is a **single N-channel MOSFET** in a **TO220F package**, designed for high voltage applications and suitable for the field of power electronics. With a **drain-source voltage (VDS)** of up to **950V**, this MOSFET can handle extremely high voltages, making it an ideal choice for applications that require high voltage control. Its **gate-source voltage (VGS)** is **±30V**, ensuring stable operation over a wide gate voltage range. The **threshold voltage (Vth)** of the K960-MR-VB is **3.5V**, enabling fast turn-on at an appropriate gate voltage. Its **on-resistance (RDS(ON))** is **2400mΩ** (at a gate voltage of 10V), which is relatively high, but still provides effective turn-on performance in high voltage applications, with a maximum drain current of **6A**. This MOSFET uses **planar technology (Plannar)** and is suitable for a variety of power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description - K960-MR-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS=10V
- **Continuous drain current (ID)**: 6A
- **Technology type**: Planar technology (Plannar)
- **Operating temperature range**: -55°C ~ 150°C
- **Maximum power dissipation (Ptot)**: 60W (at 25°C environment)
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS=10V
- **Continuous drain current (ID)**: 6A
- **Technology type**: Planar technology (Plannar)
- **Operating temperature range**: -55°C ~ 150°C
- **Maximum power dissipation (Ptot)**: 60W (at 25°C environment)
Domain and module applications：
Applications and Modules
1. **High Voltage Power Converters**:
K960-MR-VB is ideal for **high voltage DC-DC converters**. Its high drain-source voltage of 950V allows efficient processing and conversion of electrical energy in power conversion systems, especially for industrial power supplies that require high voltage control.
2. **Motor Control**:
This MOSFET has a wide range of applications in **industrial motor control** systems, especially in high voltage motor drive applications. Its high voltage and medium current capabilities can effectively control the operation of the motor, ensuring the stability and safety of the motor in a high voltage environment.
3. **Inverter**:
K960-MR-VB is suitable for **inverter** systems such as solar inverters and UPS (uninterruptible power supply) equipment. Its high voltage capability and conduction performance enable efficient energy conversion in the inverter, ensuring reliability and efficiency under different load conditions.
4. **Battery Management System**:
K960-MR-VB can also play an important role in **Battery Management System**, especially in high-voltage battery configuration. It can effectively manage the battery charging and discharging process, adapt to a variety of high-voltage battery applications, and ensure the safety and efficient operation of the system.
In summary, K960-MR-VB MOSFET is suitable for high-voltage power conversion and management, including high-voltage power converters, motor control systems, inverters, and battery management systems. It can meet the stringent requirements of these systems for high voltage and high efficiency.
1. **High Voltage Power Converters**:
K960-MR-VB is ideal for **high voltage DC-DC converters**. Its high drain-source voltage of 950V allows efficient processing and conversion of electrical energy in power conversion systems, especially for industrial power supplies that require high voltage control.
2. **Motor Control**:
This MOSFET has a wide range of applications in **industrial motor control** systems, especially in high voltage motor drive applications. Its high voltage and medium current capabilities can effectively control the operation of the motor, ensuring the stability and safety of the motor in a high voltage environment.
3. **Inverter**:
K960-MR-VB is suitable for **inverter** systems such as solar inverters and UPS (uninterruptible power supply) equipment. Its high voltage capability and conduction performance enable efficient energy conversion in the inverter, ensuring reliability and efficiency under different load conditions.
4. **Battery Management System**:
K960-MR-VB can also play an important role in **Battery Management System**, especially in high-voltage battery configuration. It can effectively manage the battery charging and discharging process, adapt to a variety of high-voltage battery applications, and ensure the safety and efficient operation of the system.
In summary, K960-MR-VB MOSFET is suitable for high-voltage power conversion and management, including high-voltage power converters, motor control systems, inverters, and battery management systems. It can meet the stringent requirements of these systems for high voltage and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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