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K902-VB Product details
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K902-VB is a high-performance N-channel MOSFET in TO3P package, designed for high current and medium voltage applications. Its drain-source voltage (VDS) is 250V, suitable for a variety of applications requiring high voltage control. The maximum drain current (ID) of this MOSFET can reach 60A, suitable for high-load power electronic equipment. When the VGS (gate-source voltage) is 10V, its RDS(ON) is only 40mΩ, and the low on-resistance makes the device have excellent energy efficiency performance in high current applications. K902-VB adopts advanced Trench technology, providing excellent switching performance and thermal management capabilities, and is an ideal choice for high-efficiency power systems.
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K902-VB is a high-performance N-channel MOSFET in TO3P package, designed for high current and medium voltage applications. Its drain-source voltage (VDS) is 250V, suitable for a variety of applications requiring high voltage control. The maximum drain current (ID) of this MOSFET can reach 60A, suitable for high-load power electronic equipment. When the VGS (gate-source voltage) is 10V, its RDS(ON) is only 40mΩ, and the low on-resistance makes the device have excellent energy efficiency performance in high current applications. K902-VB adopts advanced Trench technology, providing excellent switching performance and thermal management capabilities, and is an ideal choice for high-efficiency power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
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- **Package:** TO3P, with good heat dissipation performance, suitable for high-power applications, easy to install and dissipate heat.
- **Configuration:** Single N-channel, meaning that current flows from the drain to the source, suitable for power switches and control circuits.
- **VDS (drain-source voltage):** 250V, represents the maximum voltage between the drain and the source that the MOSFET can withstand in the off state.
- **VGS (gate-source voltage):** ±20V, refers to the maximum gate voltage (positive and negative directions) that the MOSFET can withstand, ensuring gate drive flexibility.
- **Vth (threshold voltage):** 3.5V, represents the minimum gate-source voltage required to turn on the MOSFET, ensuring reliable switching behavior.
- **RDS(ON) (on-resistance):** 40mΩ @ VGS=10V, represents the resistance between the drain and the source in the on state, affecting conduction losses and efficiency.
- **ID (drain current):** 60A, refers to the maximum continuous drain current that the MOSFET can withstand, suitable for high-load applications.
- **Technology:** Trench technology provides lower on-resistance and better thermal performance, improving overall efficiency.
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- **Package:** TO3P, with good heat dissipation performance, suitable for high-power applications, easy to install and dissipate heat.
- **Configuration:** Single N-channel, meaning that current flows from the drain to the source, suitable for power switches and control circuits.
- **VDS (drain-source voltage):** 250V, represents the maximum voltage between the drain and the source that the MOSFET can withstand in the off state.
- **VGS (gate-source voltage):** ±20V, refers to the maximum gate voltage (positive and negative directions) that the MOSFET can withstand, ensuring gate drive flexibility.
- **Vth (threshold voltage):** 3.5V, represents the minimum gate-source voltage required to turn on the MOSFET, ensuring reliable switching behavior.
- **RDS(ON) (on-resistance):** 40mΩ @ VGS=10V, represents the resistance between the drain and the source in the on state, affecting conduction losses and efficiency.
- **ID (drain current):** 60A, refers to the maximum continuous drain current that the MOSFET can withstand, suitable for high-load applications.
- **Technology:** Trench technology provides lower on-resistance and better thermal performance, improving overall efficiency.
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Domain and module applications：
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1. **Power Management System:** K902-VB is suitable for **power management systems**, such as switching power supplies and DC-DC converters. During the power conversion process, the 250V VDS and 60A ID enable it to handle high power loads, effectively reduce conduction losses, and improve energy efficiency.
2. **Motor Control:** This MOSFET can be used in **motor control drivers**, such as DC motors and stepper motor drivers. Its low RDS(ON) generates less heat under high current conditions, which helps improve system stability and reliability.
3. **Inverter:** K902-VB is also suitable for **inverter applications**, especially when converting DC to AC in solar inverters. Its high voltage and high current capabilities ensure stable operation of the inverter under high load conditions, improving the efficiency of the system.
4. **LED Drive:** This MOSFET can be used in **high-power LED drive circuits** to provide stable current control. In LED lighting systems, its high current capability and low on-resistance ensure that LEDs work at optimal efficiency, improving overall lighting quality and life.
Through the above examples, K902-VB MOSFET demonstrates its excellent performance in medium voltage and high current applications, and is suitable for key equipment in various power electronics fields.
1. **Power Management System:** K902-VB is suitable for **power management systems**, such as switching power supplies and DC-DC converters. During the power conversion process, the 250V VDS and 60A ID enable it to handle high power loads, effectively reduce conduction losses, and improve energy efficiency.
2. **Motor Control:** This MOSFET can be used in **motor control drivers**, such as DC motors and stepper motor drivers. Its low RDS(ON) generates less heat under high current conditions, which helps improve system stability and reliability.
3. **Inverter:** K902-VB is also suitable for **inverter applications**, especially when converting DC to AC in solar inverters. Its high voltage and high current capabilities ensure stable operation of the inverter under high load conditions, improving the efficiency of the system.
4. **LED Drive:** This MOSFET can be used in **high-power LED drive circuits** to provide stable current control. In LED lighting systems, its high current capability and low on-resistance ensure that LEDs work at optimal efficiency, improving overall lighting quality and life.
Through the above examples, K902-VB MOSFET demonstrates its excellent performance in medium voltage and high current applications, and is suitable for key equipment in various power electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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