K8S06K3L-VB Product details
Product introduction:
K8S06K3L-VB is a high-performance single N-channel MOSFET in TO252 package. The device has excellent electrical characteristics, a maximum drain-source voltage of 60V, and can operate stably at a gate-source voltage of ±20V. Its threshold voltage is 1.7V, ensuring reliable conduction under low voltage drive. The on-resistance of the MOSFET is 85mΩ when VGS is 4.5V, and it drops to 73mΩ at 10V, showing its excellent conductivity and low power consumption. The device has a maximum drain current of 18A and is suitable for various applications requiring high switching speed and high efficiency, especially under high frequency operation.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: K8S06K3L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage** (VDS): 60V
- **Maximum gate-source voltage** (VGS): ±20V
- **Threshold voltage** (Vth): 1.7V
- **On-resistance** (RDS(ON)):
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current** (ID): 18A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Power consumption**: Power handling capability based on thermal design
- **Switching speed**: High switching speed, suitable for high frequency applications
Domain and module applications:
1. **Power management**: K8S06K3L-VB is very suitable for efficient power management systems, especially in DC-DC converters. Its low on-resistance and high drain current capability enable it to effectively manage power, reduce energy loss, and improve the overall efficiency of the system.
2. **LED driver**: In LED lighting applications, this MOSFET can be used in LED driver circuits to support high-frequency dimming and switching control. Due to its good switching characteristics, it can achieve smooth brightness adjustment and stable current output, ensuring the long life and reliability of LED lamps.
3. **Motor control**: K8S06K3L-VB is also suitable for motor drive modules, especially in the control system of brushless DC motors (BLDC). Its high current handling capability and low conduction loss help improve motor operating efficiency, reduce heat generation, and extend motor life.
4. **Portable devices**: Due to its compact TO252 package, the K8S06K3L-VB is suitable for power switching circuits in portable electronic devices and consumer electronics, providing powerful performance in a limited space. Especially in battery-powered applications, it can effectively reduce energy consumption and improve the endurance of the device.
With its excellent electrical characteristics and wide applicability, the K8S06K3L-VB provides efficient and reliable solutions in multiple fields and modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image