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K8Q60W-VB Product details
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Product Introduction - K8Q60W-VB MOSFET
The K8Q60W-VB is a **single N-channel MOSFET** in a **TO251 package**, designed for high voltage applications, especially for applications that require high efficiency and high power handling. With a **650V drain-source voltage (VDS)** and **±30V gate-source voltage (VGS)**, the MOSFET can withstand large voltage swings and is suitable for industrial and power electronics applications. Its **threshold voltage (Vth)** is **3.5V**, which allows reliable turn-on at high gate voltages. The **on-resistance (RDS(ON))** of the K8Q60W-VB is **500mΩ@VGS=10V**, providing good conduction performance with a maximum drain current of **9A**. In addition, it uses **SJ_Multi-EPI (Super Junction Multilayer Epitaxy)** technology to further improve the performance and efficiency of the device.
The K8Q60W-VB is a **single N-channel MOSFET** in a **TO251 package**, designed for high voltage applications, especially for applications that require high efficiency and high power handling. With a **650V drain-source voltage (VDS)** and **±30V gate-source voltage (VGS)**, the MOSFET can withstand large voltage swings and is suitable for industrial and power electronics applications. Its **threshold voltage (Vth)** is **3.5V**, which allows reliable turn-on at high gate voltages. The **on-resistance (RDS(ON))** of the K8Q60W-VB is **500mΩ@VGS=10V**, providing good conduction performance with a maximum drain current of **9A**. In addition, it uses **SJ_Multi-EPI (Super Junction Multilayer Epitaxy)** technology to further improve the performance and efficiency of the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description - K8Q60W-VB
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Continuous drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxial technology)
- **Operating temperature range**: -55°C ~ 150°C
- **Maximum power consumption (Ptot)**: 65W (at 25°C environment)
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Continuous drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxial technology)
- **Operating temperature range**: -55°C ~ 150°C
- **Maximum power consumption (Ptot)**: 65W (at 25°C environment)
Domain and module applications：
Applications and modules
1. **High-voltage power converters**:
The K8Q60W-VB is ideal for **high-voltage DC-DC converters** and **AC-DC power adapters**, where its high voltage carrying capacity of 650V is suitable for efficient energy conversion in power conversion systems. Such applications require handling high voltages while requiring high efficiency at low power consumption, and the K8Q60W-VB's superjunction technology can significantly reduce conduction losses.
2. **Electric vehicle charging equipment**:
This MOSFET plays an important role in **electric vehicle chargers and battery management systems**. Its high voltage and current capabilities can meet the efficient energy conversion requirements of electric vehicle chargers, ensure the safety and stability of the charging process, and adapt to greater power requirements.
3. **Solar inverters**:
In **solar inverters**, the K8Q60W-VB's high voltage of 650V and excellent conduction performance make it suitable for applications that convert DC power to AC power. Inverter systems require efficient energy management, and the multi-layer epitaxial technology of this MOSFET provides lower power losses, improving the overall efficiency of the system.
4. **Industrial Motor Drive**:
Due to its high voltage and current carrying capacity, the K8Q60W-VB is suitable for **Industrial Motor Drive** systems. In industrial equipment, the efficient drive circuit used to control the operation of the motor can maintain low power consumption at high voltage and achieve stable motor control.
The K8Q60W-VB MOSFET is widely used in multiple high-voltage power conversion and management fields, including high-efficiency power converters, electric vehicle charging systems, solar inverters, and industrial motor drives. It can meet the stringent requirements of these systems for high voltage and high efficiency.
1. **High-voltage power converters**:
The K8Q60W-VB is ideal for **high-voltage DC-DC converters** and **AC-DC power adapters**, where its high voltage carrying capacity of 650V is suitable for efficient energy conversion in power conversion systems. Such applications require handling high voltages while requiring high efficiency at low power consumption, and the K8Q60W-VB's superjunction technology can significantly reduce conduction losses.
2. **Electric vehicle charging equipment**:
This MOSFET plays an important role in **electric vehicle chargers and battery management systems**. Its high voltage and current capabilities can meet the efficient energy conversion requirements of electric vehicle chargers, ensure the safety and stability of the charging process, and adapt to greater power requirements.
3. **Solar inverters**:
In **solar inverters**, the K8Q60W-VB's high voltage of 650V and excellent conduction performance make it suitable for applications that convert DC power to AC power. Inverter systems require efficient energy management, and the multi-layer epitaxial technology of this MOSFET provides lower power losses, improving the overall efficiency of the system.
4. **Industrial Motor Drive**:
Due to its high voltage and current carrying capacity, the K8Q60W-VB is suitable for **Industrial Motor Drive** systems. In industrial equipment, the efficient drive circuit used to control the operation of the motor can maintain low power consumption at high voltage and achieve stable motor control.
The K8Q60W-VB MOSFET is widely used in multiple high-voltage power conversion and management fields, including high-efficiency power converters, electric vehicle charging systems, solar inverters, and industrial motor drives. It can meet the stringent requirements of these systems for high voltage and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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