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K8P60W-VB Product details
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Product Introduction — K8P60W-VB MOSFET
K8P60W-VB is a high voltage unipolar N-channel MOSFET in TO252 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS) tolerance. The device has a threshold voltage of 3.5V and uses SJ_Multi-EPI (super junction multilayer epitaxial) technology to achieve low on-resistance (RDS(ON) of 500mΩ@VGS=10V) and excellent high-efficiency current management. Its maximum drain current is 9A, which is suitable for high-voltage power management and power conversion applications. It has the characteristics of high efficiency and low loss, and is very suitable for use in scenarios requiring high reliability.
K8P60W-VB is a high voltage unipolar N-channel MOSFET in TO252 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS) tolerance. The device has a threshold voltage of 3.5V and uses SJ_Multi-EPI (super junction multilayer epitaxial) technology to achieve low on-resistance (RDS(ON) of 500mΩ@VGS=10V) and excellent high-efficiency current management. Its maximum drain current is 9A, which is suitable for high-voltage power management and power conversion applications. It has the characteristics of high efficiency and low loss, and is very suitable for use in scenarios requiring high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description - K8P60W-VB MOSFET
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxy)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxy)
Domain and module applications：
Applications and Module Examples
1. **Solar Inverters**
The K8P60W-VB is ideal for use in solar inverter modules. With its drain-source voltage capability of up to 650V and low on-resistance, it enables efficient DC-AC conversion in solar systems, reducing energy consumption and improving overall efficiency.
2. **High Voltage Switching Power Supplies**
In high voltage switching power supplies, the K8P60W-VB excels in handling high voltage inputs and providing stable power outputs. Its 9A current handling capability and low loss characteristics make it suitable for high performance applications such as industrial power supplies and communication power supplies.
3. **Battery Management Systems (BMS)**
The K8P60W-VB can also be used in battery management systems, especially in electric vehicles and energy storage systems. Its low conduction loss and high withstand voltage characteristics can provide reliable current control during the battery charging and discharging process, ensuring the efficiency and safety of the system.
4. **Home Appliances**
This MOSFET is also suitable for power management modules of high-voltage home appliances, such as motor drive and power conversion of air conditioners, refrigerators and washing machines. Its high voltage and low loss characteristics can help improve the energy efficiency and reliability of equipment.
5. **Industrial Automation Equipment**
In the field of industrial automation, K8P60W-VB can be used as a driver device to control high-voltage equipment. The efficient conduction and low loss characteristics brought by its SJ_Multi-EPI technology ensure its stability and high performance in various industrial control modules.
1. **Solar Inverters**
The K8P60W-VB is ideal for use in solar inverter modules. With its drain-source voltage capability of up to 650V and low on-resistance, it enables efficient DC-AC conversion in solar systems, reducing energy consumption and improving overall efficiency.
2. **High Voltage Switching Power Supplies**
In high voltage switching power supplies, the K8P60W-VB excels in handling high voltage inputs and providing stable power outputs. Its 9A current handling capability and low loss characteristics make it suitable for high performance applications such as industrial power supplies and communication power supplies.
3. **Battery Management Systems (BMS)**
The K8P60W-VB can also be used in battery management systems, especially in electric vehicles and energy storage systems. Its low conduction loss and high withstand voltage characteristics can provide reliable current control during the battery charging and discharging process, ensuring the efficiency and safety of the system.
4. **Home Appliances**
This MOSFET is also suitable for power management modules of high-voltage home appliances, such as motor drive and power conversion of air conditioners, refrigerators and washing machines. Its high voltage and low loss characteristics can help improve the energy efficiency and reliability of equipment.
5. **Industrial Automation Equipment**
In the field of industrial automation, K8P60W-VB can be used as a driver device to control high-voltage equipment. The efficient conduction and low loss characteristics brought by its SJ_Multi-EPI technology ensure its stability and high performance in various industrial control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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