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K8A60DA-VB Product details
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K8A60DA-VB is a high voltage N-channel MOSFET in TO220F package, suitable for high voltage and medium current power applications. Its drain-source voltage (VDS) is 650V, which can withstand high voltage environments and provide reliable power control and conversion. With a maximum drain current (ID) of 10A, this MOSFET can handle moderate currents and is suitable for medium power applications requiring high voltage switching. Its RDS(ON) is 830mΩ @ VGS=10V, and its on-resistance is moderate, suitable for situations where efficiency and cost are balanced. K8A60DA-VB uses planar technology to provide reliable performance in high voltage power electronic systems.
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K8A60DA-VB is a high voltage N-channel MOSFET in TO220F package, suitable for high voltage and medium current power applications. Its drain-source voltage (VDS) is 650V, which can withstand high voltage environments and provide reliable power control and conversion. With a maximum drain current (ID) of 10A, this MOSFET can handle moderate currents and is suitable for medium power applications requiring high voltage switching. Its RDS(ON) is 830mΩ @ VGS=10V, and its on-resistance is moderate, suitable for situations where efficiency and cost are balanced. K8A60DA-VB uses planar technology to provide reliable performance in high voltage power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package:** TO220F, with insulated heat sink, suitable for applications with high power and large heat dissipation requirements.
- **Configuration:** Single N-channel, indicating that the current flows from the drain to the source, commonly used in power switches and conversion circuits.
- **VDS (drain-source voltage):** 650V, indicating the maximum drain-to-source voltage that the MOSFET can withstand, suitable for high-voltage applications.
- **VGS (gate-source voltage):** ±30V, refers to the maximum gate voltage (positive and negative directions) that the MOSFET can withstand, ensuring the flexibility of the gate drive.
- **Vth (threshold voltage):** 3.5V, the gate-source voltage required for the MOSFET to start conducting, ensuring reliable switching behavior.
- **RDS(ON) (on-resistance):** 830mΩ @ VGS=10V, the resistance between the drain and the source in the on state, affecting the conduction loss.
- **ID (Drain Current):** 10A, indicating the maximum continuous drain current that the MOSFET can handle.
- **Technology:** Planar technology, providing stability and long-term reliability in high-voltage applications.
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- **Package:** TO220F, with insulated heat sink, suitable for applications with high power and large heat dissipation requirements.
- **Configuration:** Single N-channel, indicating that the current flows from the drain to the source, commonly used in power switches and conversion circuits.
- **VDS (drain-source voltage):** 650V, indicating the maximum drain-to-source voltage that the MOSFET can withstand, suitable for high-voltage applications.
- **VGS (gate-source voltage):** ±30V, refers to the maximum gate voltage (positive and negative directions) that the MOSFET can withstand, ensuring the flexibility of the gate drive.
- **Vth (threshold voltage):** 3.5V, the gate-source voltage required for the MOSFET to start conducting, ensuring reliable switching behavior.
- **RDS(ON) (on-resistance):** 830mΩ @ VGS=10V, the resistance between the drain and the source in the on state, affecting the conduction loss.
- **ID (Drain Current):** 10A, indicating the maximum continuous drain current that the MOSFET can handle.
- **Technology:** Planar technology, providing stability and long-term reliability in high-voltage applications.
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Domain and module applications：
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1. **Industrial Power Supply:** The K8A60DA-VB is suitable for **industrial power supply equipment**, such as uninterruptible power supplies (UPS) and high-voltage DC power supplies. Its high voltage handling capability of 650V makes it suitable for use as a high-voltage switching element in power conversion, ensuring that the equipment can efficiently convert power and reduce energy losses.
2. **Photovoltaic Inverter:** This MOSFET can be used in **solar photovoltaic inverters**, which convert DC power to AC power in solar systems. Its high voltage and moderate current handling capabilities ensure stable operation of the inverter in high-voltage environments, improving the overall efficiency of the system.
3. **Motor Drive:** The K8A60DA-VB is also suitable for **motor drive circuits**, especially in situations where medium currents and high voltages need to be handled. Its good switching performance ensures that the motor can operate efficiently, reduces switching losses and improves the reliability of the drive system.
4. **Lighting system:** This MOSFET can be used in **high voltage lighting systems**, such as power supply control for LED lighting or high pressure discharge lamps. Its high voltage withstand capability enables it to handle high voltage input from the power supply and effectively control the current of the lighting equipment, providing stable lighting control.
Through these examples, the K8A60DA-VB MOSFET demonstrates its excellent performance in high voltage and medium current applications, and is suitable for a variety of key equipment in the industrial and power electronics fields.
1. **Industrial Power Supply:** The K8A60DA-VB is suitable for **industrial power supply equipment**, such as uninterruptible power supplies (UPS) and high-voltage DC power supplies. Its high voltage handling capability of 650V makes it suitable for use as a high-voltage switching element in power conversion, ensuring that the equipment can efficiently convert power and reduce energy losses.
2. **Photovoltaic Inverter:** This MOSFET can be used in **solar photovoltaic inverters**, which convert DC power to AC power in solar systems. Its high voltage and moderate current handling capabilities ensure stable operation of the inverter in high-voltage environments, improving the overall efficiency of the system.
3. **Motor Drive:** The K8A60DA-VB is also suitable for **motor drive circuits**, especially in situations where medium currents and high voltages need to be handled. Its good switching performance ensures that the motor can operate efficiently, reduces switching losses and improves the reliability of the drive system.
4. **Lighting system:** This MOSFET can be used in **high voltage lighting systems**, such as power supply control for LED lighting or high pressure discharge lamps. Its high voltage withstand capability enables it to handle high voltage input from the power supply and effectively control the current of the lighting equipment, providing stable lighting control.
Through these examples, the K8A60DA-VB MOSFET demonstrates its excellent performance in high voltage and medium current applications, and is suitable for a variety of key equipment in the industrial and power electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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