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K8A45DA-VB Product details
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1. K8A45DA-VB Product Introduction
K8A45DA-VB is a single N-channel power MOSFET in TO220F package, designed for high voltage and medium current applications. The device has a drain-source breakdown voltage (VDS) of 650V, supports a maximum gate drive voltage (VGS) of ±30V, and a turn-on voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 680mΩ at VGS=10V, and the rated drain current (ID) is 12A. K8A45DA-VB uses planar technology (Plannar), which is suitable for high voltage applications and can effectively reduce switching losses and improve system efficiency.
K8A45DA-VB is a single N-channel power MOSFET in TO220F package, designed for high voltage and medium current applications. The device has a drain-source breakdown voltage (VDS) of 650V, supports a maximum gate drive voltage (VGS) of ±30V, and a turn-on voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 680mΩ at VGS=10V, and the rated drain current (ID) is 12A. K8A45DA-VB uses planar technology (Plannar), which is suitable for high voltage applications and can effectively reduce switching losses and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. K8A45DA-VB Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology type**: Plannar
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Good thermal management characteristics under optimized design
- **Switching speed**: Switching performance suitable for lower frequency applications
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology type**: Plannar
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Good thermal management characteristics under optimized design
- **Switching speed**: Switching performance suitable for lower frequency applications
Domain and module applications：
3. Application fields and module examples
**1. Power converters**:
K8A45DA-VB is very suitable for various high-voltage power converters and can effectively handle high voltage inputs of 650V. Its low on-resistance characteristics help improve conversion efficiency and reduce energy loss, making it an ideal choice for power management applications.
**2. Electric vehicle charging equipment**:
This MOSFET can be used in charging equipment for electric vehicles, withstanding voltages up to 650V, ensuring stable and safe current transmission during the charging process, and supporting fast charging requirements.
**3. Photovoltaic inverters**:
K8A45DA-VB is suitable for use as a switching element in photovoltaic inverters to convert DC power generated by solar panels into AC power. Its high voltage withstand capability and excellent switching performance enable it to work reliably under high energy and high frequency conditions.
**4. Industrial power control**:
In industrial automation equipment, this MOSFET can be used for power control and load switching to ensure the stability and safety of the system under high-voltage environments, and is widely used in various control circuits.
**5. Consumer electronics**:
K8A45DA-VB is also suitable for power management of consumer electronics such as high-efficiency power adapters and chargers, providing stable current and voltage to ensure the normal operation of the equipment under high load and improve user experience.
**1. Power converters**:
K8A45DA-VB is very suitable for various high-voltage power converters and can effectively handle high voltage inputs of 650V. Its low on-resistance characteristics help improve conversion efficiency and reduce energy loss, making it an ideal choice for power management applications.
**2. Electric vehicle charging equipment**:
This MOSFET can be used in charging equipment for electric vehicles, withstanding voltages up to 650V, ensuring stable and safe current transmission during the charging process, and supporting fast charging requirements.
**3. Photovoltaic inverters**:
K8A45DA-VB is suitable for use as a switching element in photovoltaic inverters to convert DC power generated by solar panels into AC power. Its high voltage withstand capability and excellent switching performance enable it to work reliably under high energy and high frequency conditions.
**4. Industrial power control**:
In industrial automation equipment, this MOSFET can be used for power control and load switching to ensure the stability and safety of the system under high-voltage environments, and is widely used in various control circuits.
**5. Consumer electronics**:
K8A45DA-VB is also suitable for power management of consumer electronics such as high-efficiency power adapters and chargers, providing stable current and voltage to ensure the normal operation of the equipment under high load and improve user experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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