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K801-Z-T2-VB Product details
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K801-Z-T2-VB MOSFET Product Introduction
K801-Z-T2-VB is a high-performance single N-channel MOSFET designed for applications requiring low conduction losses and high current capabilities. The device is packaged in TO252 and has a drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V, making it suitable for operation at lower voltages. Its threshold voltage (Vth) is 1.7V, ensuring rapid turn-on at a small gate voltage. The on-resistance (RDS(ON)) of this MOSFET is only 7mΩ at a VGS of 10V and 9mΩ at a VGS of 4.5V, making it an excellent performer in power-intensive applications with a maximum drain current (ID) of up to 70A. The trench technology design of the K801-Z-T2-VB provides a reliable solution for a variety of power management and drive applications.
K801-Z-T2-VB is a high-performance single N-channel MOSFET designed for applications requiring low conduction losses and high current capabilities. The device is packaged in TO252 and has a drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V, making it suitable for operation at lower voltages. Its threshold voltage (Vth) is 1.7V, ensuring rapid turn-on at a small gate voltage. The on-resistance (RDS(ON)) of this MOSFET is only 7mΩ at a VGS of 10V and 9mΩ at a VGS of 4.5V, making it an excellent performer in power-intensive applications with a maximum drain current (ID) of up to 70A. The trench technology design of the K801-Z-T2-VB provides a reliable solution for a variety of power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
K801-Z-T2-VB Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C ~ 150°C
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C ~ 150°C
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**: K801-Z-T2-VB can be used as a switching element in DC-DC converters. With its low on-resistance and high current capability, it can significantly improve conversion efficiency and reduce power loss, making it suitable for high-efficiency power supply design.
2. **Power management**: This MOSFET is very suitable for various power management applications, including battery management systems and power regulators. It can efficiently control the output voltage and current of the power supply to ensure the stability and reliability of the system.
3. **Power tools**: In power tools, K801-Z-T2-VB can be used in motor drive and control circuits. With its high current capability and low conduction loss, it helps to improve the power and endurance of power tools.
4. **Electric vehicle charger**: In electric vehicle chargers, the excellent performance of this MOSFET can support efficient power conversion and management, ensure that energy loss during charging is minimized, and provide a fast and safe charging solution.
The excellent performance and wide applicability of K801-Z-T2-VB make it an ideal choice in modern electronic design, able to meet the needs of various power and drive applications.
1. **DC-DC converter**: K801-Z-T2-VB can be used as a switching element in DC-DC converters. With its low on-resistance and high current capability, it can significantly improve conversion efficiency and reduce power loss, making it suitable for high-efficiency power supply design.
2. **Power management**: This MOSFET is very suitable for various power management applications, including battery management systems and power regulators. It can efficiently control the output voltage and current of the power supply to ensure the stability and reliability of the system.
3. **Power tools**: In power tools, K801-Z-T2-VB can be used in motor drive and control circuits. With its high current capability and low conduction loss, it helps to improve the power and endurance of power tools.
4. **Electric vehicle charger**: In electric vehicle chargers, the excellent performance of this MOSFET can support efficient power conversion and management, ensure that energy loss during charging is minimized, and provide a fast and safe charging solution.
The excellent performance and wide applicability of K801-Z-T2-VB make it an ideal choice in modern electronic design, able to meet the needs of various power and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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