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K7S10N1Z-VB Product details
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Product Introduction — K7S10N1Z-VB MOSFET
The K7S10N1Z-VB is a high-performance unipolar N-channel MOSFET in a TO252 package with a maximum drain-source voltage of 100V and a gate-source voltage tolerance of ±20V. The device has a threshold voltage of 1.8V, which enables it to effectively conduct at a lower gate-source voltage, exhibiting excellent switching performance. The K7S10N1Z-VB uses Trench technology, has a low on-resistance (RDS(ON) of 35mΩ@VGS=4.5V, 30mΩ@VGS=10V), and can withstand a drain current of up to 40A, making it suitable for a variety of high-efficiency circuit applications.
The K7S10N1Z-VB is a high-performance unipolar N-channel MOSFET in a TO252 package with a maximum drain-source voltage of 100V and a gate-source voltage tolerance of ±20V. The device has a threshold voltage of 1.8V, which enables it to effectively conduct at a lower gate-source voltage, exhibiting excellent switching performance. The K7S10N1Z-VB uses Trench technology, has a low on-resistance (RDS(ON) of 35mΩ@VGS=4.5V, 30mΩ@VGS=10V), and can withstand a drain current of up to 40A, making it suitable for a variety of high-efficiency circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description - K7S10N1Z-VB MOSFET
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **DC-DC Converters**
K7S10N1Z-VB is very suitable for use as a switching element in DC-DC converters due to its high current and low on-resistance. Its efficient switching characteristics can significantly improve conversion efficiency and is widely used in portable devices, industrial power supplies, and server power supplies.
2. **Motor Drives**
In motor control systems, K7S10N1Z-VB can be used as the main switching element for efficient drives. Its high current and low conduction loss make it excellent in DC motor and stepper motor control, and suitable for drive applications in power tools and household appliances.
3. **Power Management**
K7S10N1Z-VB is suitable for various power management circuits and can achieve efficient load switching. Whether it is a battery management system or a smart power adapter, this MOSFET can manage power distribution in a low-power and high-efficiency manner to improve the performance of the overall system.
4. **Lighting Control**
This MOSFET is also suitable for LED lighting control modules. In LED driver applications, K7S10N1Z-VB can quickly switch on and off, control the brightness and switching of lights, ensure the high efficiency and reliability of the lighting system, and is widely used in smart home and commercial lighting fields.
1. **DC-DC Converters**
K7S10N1Z-VB is very suitable for use as a switching element in DC-DC converters due to its high current and low on-resistance. Its efficient switching characteristics can significantly improve conversion efficiency and is widely used in portable devices, industrial power supplies, and server power supplies.
2. **Motor Drives**
In motor control systems, K7S10N1Z-VB can be used as the main switching element for efficient drives. Its high current and low conduction loss make it excellent in DC motor and stepper motor control, and suitable for drive applications in power tools and household appliances.
3. **Power Management**
K7S10N1Z-VB is suitable for various power management circuits and can achieve efficient load switching. Whether it is a battery management system or a smart power adapter, this MOSFET can manage power distribution in a low-power and high-efficiency manner to improve the performance of the overall system.
4. **Lighting Control**
This MOSFET is also suitable for LED lighting control modules. In LED driver applications, K7S10N1Z-VB can quickly switch on and off, control the brightness and switching of lights, ensure the high efficiency and reliability of the lighting system, and is widely used in smart home and commercial lighting fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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