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K7P60W-VB Product details
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1. K7P60W-VB Product Introduction
K7P60W-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage and high current applications. The device has a drain-source breakdown voltage (VDS) of 650V, a gate drive voltage (VGS) of ±30V, a turn-on voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 500mΩ at VGS=10V, and a rated drain current (ID) of 9A. K7P60W-VB uses advanced super junction multi-epitaxial (SJ_Multi-EPI) technology, which can provide excellent switching performance and energy efficiency under high voltage conditions, and is suitable for applications in a variety of harsh environments.
K7P60W-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage and high current applications. The device has a drain-source breakdown voltage (VDS) of 650V, a gate drive voltage (VGS) of ±30V, a turn-on voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 500mΩ at VGS=10V, and a rated drain current (ID) of 9A. K7P60W-VB uses advanced super junction multi-epitaxial (SJ_Multi-EPI) technology, which can provide excellent switching performance and energy efficiency under high voltage conditions, and is suitable for applications in a variety of harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. K7P60W-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: Superjunction multi-epitaxial (SJ_Multi-EPI)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Low loss characteristics under optimized design
- **Switching speed**: Excellent switching performance, suitable for high frequency applications
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: Superjunction multi-epitaxial (SJ_Multi-EPI)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Low loss characteristics under optimized design
- **Switching speed**: Excellent switching performance, suitable for high frequency applications
Domain and module applications：
3. Application fields and module examples
**1. High-voltage power converters**:
K7P60W-VB can be widely used in high-voltage power converters, especially in applications that need to handle 650V high-voltage input. Its low on-resistance and high efficiency characteristics help improve overall conversion efficiency, reduce energy consumption, and are suitable for power management systems.
**2. Electric vehicle charging system**:
In electric vehicle charging systems, this MOSFET can withstand voltages up to 650V, ensuring stable and safe current transmission during charging. Its efficient switching characteristics can improve charging efficiency and reduce heat generation.
**3. Photovoltaic inverters**:
K7P60W-VB is very suitable for use in photovoltaic inverters to convert DC power generated by solar panels into AC power. Its high breakdown voltage and excellent switching performance enable it to work stably under high energy and high frequency conditions.
**4. Industrial control systems**:
In various industrial control systems, such as automation equipment and robots, K7P60W-VB can be used to drive motors and control loads, ensuring the stability and safety of the system in high-voltage environments.
**5. Consumer electronics**:
This MOSFET is also suitable for various consumer electronics products, such as high-efficiency power adapters and chargers, providing reliable current management and ensuring the normal operation of equipment under high voltage and high load.
**1. High-voltage power converters**:
K7P60W-VB can be widely used in high-voltage power converters, especially in applications that need to handle 650V high-voltage input. Its low on-resistance and high efficiency characteristics help improve overall conversion efficiency, reduce energy consumption, and are suitable for power management systems.
**2. Electric vehicle charging system**:
In electric vehicle charging systems, this MOSFET can withstand voltages up to 650V, ensuring stable and safe current transmission during charging. Its efficient switching characteristics can improve charging efficiency and reduce heat generation.
**3. Photovoltaic inverters**:
K7P60W-VB is very suitable for use in photovoltaic inverters to convert DC power generated by solar panels into AC power. Its high breakdown voltage and excellent switching performance enable it to work stably under high energy and high frequency conditions.
**4. Industrial control systems**:
In various industrial control systems, such as automation equipment and robots, K7P60W-VB can be used to drive motors and control loads, ensuring the stability and safety of the system in high-voltage environments.
**5. Consumer electronics**:
This MOSFET is also suitable for various consumer electronics products, such as high-efficiency power adapters and chargers, providing reliable current management and ensuring the normal operation of equipment under high voltage and high load.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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