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K7P60W5-VB Product details
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Product Introduction
The K7P60W5-VB is a high-performance N-channel MOSFET in a TO252 package with a maximum drain-source voltage of 650V and a maximum drain current of 9A. This MOSFET uses SJ_Multi-EPI superjunction multi-epitaxial technology and is designed to provide excellent performance in high-voltage environments. Its low on-resistance of 500mΩ (@ VGS=10V) makes it ideal for high-efficiency power management and switching applications. The design of the K7P60W5-VB ensures superior thermal performance and electrical stability, allowing it to perform well in complex power electronic systems.
The K7P60W5-VB is a high-performance N-channel MOSFET in a TO252 package with a maximum drain-source voltage of 650V and a maximum drain current of 9A. This MOSFET uses SJ_Multi-EPI superjunction multi-epitaxial technology and is designed to provide excellent performance in high-voltage environments. Its low on-resistance of 500mΩ (@ VGS=10V) makes it ideal for high-efficiency power management and switching applications. The design of the K7P60W5-VB ensures superior thermal performance and electrical stability, allowing it to perform well in complex power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (@ VGS=10V)
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology)
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (@ VGS=10V)
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology)
Domain and module applications：
Applications and Modules
1. **High-voltage Switching Power Supply (SMPS)**: The K7P60W5-VB is ideal for use in high-voltage switching power supplies, especially in applications that require high efficiency and high power density. Its high drain-source voltage of up to 650V and low on-resistance can effectively reduce switching losses and improve the overall energy efficiency of the system.
2. **Electric Vehicle (EV) Power Management**: In the power management system of electric vehicles, the K7P60W5-VB can be used in high-voltage DC-DC converters to ensure efficient power transmission and reduce system heat loss, thereby improving the endurance of electric vehicles.
3. **Industrial Control Systems**: In industrial applications, this MOSFET can be used in motor drives and automation control systems. With its stability and high current carrying capacity, the K7P60W5-VB can continue to provide reliable performance in harsh environments.
4. **LED lighting driver**: K7P60W5-VB is also suitable for LED lighting controllers, providing efficient current management and dimming capabilities to ensure that LED lamps work stably and with consistent brightness under high voltage conditions.
1. **High-voltage Switching Power Supply (SMPS)**: The K7P60W5-VB is ideal for use in high-voltage switching power supplies, especially in applications that require high efficiency and high power density. Its high drain-source voltage of up to 650V and low on-resistance can effectively reduce switching losses and improve the overall energy efficiency of the system.
2. **Electric Vehicle (EV) Power Management**: In the power management system of electric vehicles, the K7P60W5-VB can be used in high-voltage DC-DC converters to ensure efficient power transmission and reduce system heat loss, thereby improving the endurance of electric vehicles.
3. **Industrial Control Systems**: In industrial applications, this MOSFET can be used in motor drives and automation control systems. With its stability and high current carrying capacity, the K7P60W5-VB can continue to provide reliable performance in harsh environments.
4. **LED lighting driver**: K7P60W5-VB is also suitable for LED lighting controllers, providing efficient current management and dimming capabilities to ensure that LED lamps work stably and with consistent brightness under high voltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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