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K7A55D-VB Product details
Back to previous pageProduct introduction：
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K7A55D-VB is a high-voltage N-channel MOSFET in TO220F package, designed for power applications requiring high voltage and reliability. Its VDS (drain-source voltage) is up to 650V, capable of handling a variety of high-voltage environments. The maximum drain current (ID) of this MOSFET is 7A, suitable for medium-power switching applications. When the VGS (gate-source voltage) is 10V, its RDS(ON) is 1100mΩ, which means that the on-resistance in the on state is relatively high, which is suitable for applications with small current but requiring higher voltage. K7A55D-VB adopts planar technology (Plannar), which shows good stability and reliability in high-voltage applications.
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K7A55D-VB is a high-voltage N-channel MOSFET in TO220F package, designed for power applications requiring high voltage and reliability. Its VDS (drain-source voltage) is up to 650V, capable of handling a variety of high-voltage environments. The maximum drain current (ID) of this MOSFET is 7A, suitable for medium-power switching applications. When the VGS (gate-source voltage) is 10V, its RDS(ON) is 1100mΩ, which means that the on-resistance in the on state is relatively high, which is suitable for applications with small current but requiring higher voltage. K7A55D-VB adopts planar technology (Plannar), which shows good stability and reliability in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package:** TO220F, provides good heat dissipation and easy installation, suitable for high power and high voltage applications.
- **Configuration:** Single N-channel, which means that the MOSFET is an N-type structure, and the current flows from the drain to the source.
- **VDS (drain-source voltage):** 650V, refers to the maximum voltage between the drain and the source of the MOSFET in the off state.
- **VGS (gate-source voltage):** ±30V, indicates the maximum gate voltage (positive and negative directions) that the MOSFET can withstand.
- **Vth (threshold voltage):** 3.5V, the gate-source voltage required to turn on the MOSFET and start conducting.
- **RDS(ON) (on-resistance):** 1100mΩ @ VGS=10V, indicates the resistance between the drain and the source in the on state, affecting the conduction loss.
- **ID (drain current):** 7A, refers to the maximum continuous current that the MOSFET can withstand.
- **Technology:** Plannar technology provides good performance stability in high voltage applications.
**
- **Package:** TO220F, provides good heat dissipation and easy installation, suitable for high power and high voltage applications.
- **Configuration:** Single N-channel, which means that the MOSFET is an N-type structure, and the current flows from the drain to the source.
- **VDS (drain-source voltage):** 650V, refers to the maximum voltage between the drain and the source of the MOSFET in the off state.
- **VGS (gate-source voltage):** ±30V, indicates the maximum gate voltage (positive and negative directions) that the MOSFET can withstand.
- **Vth (threshold voltage):** 3.5V, the gate-source voltage required to turn on the MOSFET and start conducting.
- **RDS(ON) (on-resistance):** 1100mΩ @ VGS=10V, indicates the resistance between the drain and the source in the on state, affecting the conduction loss.
- **ID (drain current):** 7A, refers to the maximum continuous current that the MOSFET can withstand.
- **Technology:** Plannar technology provides good performance stability in high voltage applications.
**
Domain and module applications：
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1. **Power Adapters:** The K7A55D-VB can be used in **power adapters**, especially where high voltage output is required. Its high VDS of 650V makes it suitable for use in the power conversion stage, where it can efficiently convert AC to DC to meet the needs of various electronic devices.
2. **Lighting Control:** This MOSFET can be used in **high voltage lighting control systems**, such as fluorescent lamp ballasts and LED driver circuits. In these applications, the high voltage and medium current handling capabilities of the K7A55D-VB can help achieve stable current control, improving the efficiency and reliability of the lighting system.
3. **Industrial Equipment:** The K7A55D-VB is suitable as a switching element in **industrial equipment**, especially in motor drive and load switching applications. Its high VDS can effectively control higher voltage devices, ensuring stable operation in industrial automation environments.
4. **Inverter:** This MOSFET can also be used in **inverters** to convert DC power to AC power, suitable for solar systems or uninterruptible power supplies (UPS). The high-voltage handling capability of the K7A55D-VB enables it to meet the high power conversion requirements of inverters and ensure system stability.
These application areas demonstrate the excellent performance of the K7A55D-VB MOSFET at high voltages and medium currents, ensuring that it plays an important role in various power electronic devices.
1. **Power Adapters:** The K7A55D-VB can be used in **power adapters**, especially where high voltage output is required. Its high VDS of 650V makes it suitable for use in the power conversion stage, where it can efficiently convert AC to DC to meet the needs of various electronic devices.
2. **Lighting Control:** This MOSFET can be used in **high voltage lighting control systems**, such as fluorescent lamp ballasts and LED driver circuits. In these applications, the high voltage and medium current handling capabilities of the K7A55D-VB can help achieve stable current control, improving the efficiency and reliability of the lighting system.
3. **Industrial Equipment:** The K7A55D-VB is suitable as a switching element in **industrial equipment**, especially in motor drive and load switching applications. Its high VDS can effectively control higher voltage devices, ensuring stable operation in industrial automation environments.
4. **Inverter:** This MOSFET can also be used in **inverters** to convert DC power to AC power, suitable for solar systems or uninterruptible power supplies (UPS). The high-voltage handling capability of the K7A55D-VB enables it to meet the high power conversion requirements of inverters and ensure system stability.
These application areas demonstrate the excellent performance of the K7A55D-VB MOSFET at high voltages and medium currents, ensuring that it plays an important role in various power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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