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K72E08N1-VB Product details

Product introduction:

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K72E08N1-VB is a high-performance N-channel MOSFET in TO220 package, designed for high current and high efficiency applications. Its VDS (drain-source voltage) is up to 80V, suitable for various power management and conversion circuits. The maximum drain current (ID) of this MOSFET is 195A, and it has an RDS(ON) as low as 3mΩ at a VGS (gate-source voltage) of 10V, ensuring low conduction loss and high efficiency. K72E08N1-VB adopts trench technology (Trench), which achieves higher integration and lower energy consumption while ensuring excellent switching performance and thermal management, making it suitable for modern power electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 195A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 195A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 195A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
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- **Package:** TO220, provides good heat dissipation and installation convenience, suitable for high power applications.
- **Configuration:** Single N-channel, which means that the MOSFET is an N-type structure, and the current flows from the drain to the source.
- **VDS (drain-source voltage):** 80V, refers to the maximum voltage between the drain and the source of the MOSFET in the off state.
- **VGS (gate-source voltage):** ±20V, represents the maximum gate voltage (positive and negative directions) that the MOSFET can withstand.
- **Vth (threshold voltage):** 3V, the gate-source voltage required to turn on the MOSFET and start conducting.
- **RDS(ON) (on-resistance):**
- 3.6mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V, represents the resistance between the drain and the source in the on state, which affects the conduction loss.
- **ID (drain current):** 195A, refers to the maximum continuous current that the MOSFET can withstand.
- **Technology:** Trench technology, which achieves lower on-resistance and higher switching speed through the trench structure.

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Domain and module applications:

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1. **Power Management:** The K72E08N1-VB can be widely used in **Switching Power Supplies (SMPS)**, especially in high-efficiency power conversion modules. Due to its high current carrying capability and low on-resistance, this MOSFET can significantly improve the conversion efficiency of the power supply and reduce heat loss.

2. **Electric Vehicles:** In **Electric Vehicle Drive Systems**, this MOSFET is suitable for motor control and battery management systems. Its high ID and superior on-performance enable it to handle the large currents in electric vehicles, ensuring efficient operation and fast response of the motor.

3. **Industrial Automation:** This MOSFET is suitable for motor drive and load switching applications in **Industrial Automation Systems**. Its robust performance and high current carrying capability make it suitable for use in industrial environments that require high power and reliability.

4. **Solar Inverters:** The K72E08N1-VB can also be used in **Solar Inverters**, which are responsible for converting DC power to AC power. Its high efficiency and durability enable it to play an important role in the power conversion link of the inverter, thereby improving the overall efficiency of the system.

These application areas benefit from the excellent performance of the K72E08N1-VB MOSFET at high voltage and high current, while ensuring reliability and durability in various working environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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