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K6Q60W-VB Product details
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1. K6Q60W-VB Product Introduction
K6Q60W-VB is a single N-channel power MOSFET in TO251 package, with a breakdown voltage (VDS) of 650V, a maximum gate drive voltage (VGS) of ±30V, and a turn-on voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 700mΩ@VGS=10V, and the rated current (ID) is 7A. This product uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which can provide excellent switching performance and energy efficiency under high voltage and high power conditions, and is particularly suitable for applications with high voltage requirements.
K6Q60W-VB is a single N-channel power MOSFET in TO251 package, with a breakdown voltage (VDS) of 650V, a maximum gate drive voltage (VGS) of ±30V, and a turn-on voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 700mΩ@VGS=10V, and the rated current (ID) is 7A. This product uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which can provide excellent switching performance and energy efficiency under high voltage and high power conditions, and is particularly suitable for applications with high voltage requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. K6Q60W-VB Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Superjunction multi-epitaxial (SJ_Multi-EPI)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Depends on the specific application, but has low loss characteristics under optimized design
- **Switching speed**: Efficient switching performance for high frequency applications
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Superjunction multi-epitaxial (SJ_Multi-EPI)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Depends on the specific application, but has low loss characteristics under optimized design
- **Switching speed**: Efficient switching performance for high frequency applications
Domain and module applications：
3. Application fields and module examples
**1. Industrial power converters**:
The high voltage withstand capability of K6Q60W-VB makes it suitable for industrial-grade power converters, especially in power modules that need to handle high voltage input and output. Its low on-resistance and good switching performance can help improve conversion efficiency and reduce energy loss.
**2. Electric vehicle charging piles**:
In the high-voltage charging module of electric vehicle charging stations or charging piles, this MOSFET can withstand voltages up to 650V, ensure stable current transmission, and maintain high efficiency performance in high-frequency switching operations.
**3. Photovoltaic inverters**:
In photovoltaic systems, K6Q60W-VB can be applied to high-voltage DC-AC inverter modules. Its high breakdown voltage and low conduction loss enable it to maintain high energy efficiency output during solar energy conversion.
**4. LED lighting drive circuit**:
As LED lighting systems require efficient and stable power management, this device can be used in high-voltage LED drivers to provide stable current control and efficient power conversion, suitable for high-power LED applications.
**5. Motor drive control system**:
For high-power motor drive control, this device can operate under high voltage and high current conditions while maintaining low loss and high switching speed, which helps the motor drive to respond quickly and optimize efficiency.
**1. Industrial power converters**:
The high voltage withstand capability of K6Q60W-VB makes it suitable for industrial-grade power converters, especially in power modules that need to handle high voltage input and output. Its low on-resistance and good switching performance can help improve conversion efficiency and reduce energy loss.
**2. Electric vehicle charging piles**:
In the high-voltage charging module of electric vehicle charging stations or charging piles, this MOSFET can withstand voltages up to 650V, ensure stable current transmission, and maintain high efficiency performance in high-frequency switching operations.
**3. Photovoltaic inverters**:
In photovoltaic systems, K6Q60W-VB can be applied to high-voltage DC-AC inverter modules. Its high breakdown voltage and low conduction loss enable it to maintain high energy efficiency output during solar energy conversion.
**4. LED lighting drive circuit**:
As LED lighting systems require efficient and stable power management, this device can be used in high-voltage LED drivers to provide stable current control and efficient power conversion, suitable for high-power LED applications.
**5. Motor drive control system**:
For high-power motor drive control, this device can operate under high voltage and high current conditions while maintaining low loss and high switching speed, which helps the motor drive to respond quickly and optimize efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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