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K6P53D-VB Product details

Product introduction:

Product Introduction:
K6P53D-VB is a single N-channel MOSFET in TO252 package, suitable for high voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and adopts super junction (SJ_Multi-EPI) technology. This technology can effectively reduce the on-resistance, making its on-resistance (RDS(ON)) 1000mΩ when VGS=10V and the rated current (ID) 5A. This MOSFET has a threshold voltage (Vth) of 3.5V and can provide efficient power conversion solutions in switching power supplies and high voltage conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description:
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI super junction technology
- **Gate charge (Qg)**: Medium gate charge, suitable for fast switching
- **Thermal resistance (RthJC)**: Good thermal management performance under TO252 package

Domain and module applications:

Application fields and modules:
K6P53D-VB is mainly suitable for scenarios that require high voltage blocking capability due to its high withstand voltage characteristics of 650V. Typical application fields include:

1. **Power conversion module**: In the switching power supply (SMPS), this MOSFET can be used for efficient AC-DC and DC-DC conversion. Its high voltage withstand capability and low on-resistance give it significant advantages in systems with higher input voltages, such as industrial power supplies, solar inverters, etc.

2. **Lighting circuit**: In LED drivers and other lighting control circuits, the 650V withstand voltage of K6P53D-VB enables it to handle the regulation and drive of grid voltage, ensuring efficient power conversion and stable output.

3. **Motor control**: In high-voltage motor control circuits, this MOSFET can be used to control the switching operation of high-power motors, especially suitable for high-voltage motor drives in industrial motors and household appliances.

4. **Power modules and high-voltage converters**: Such as the PFC (power factor correction) circuit of high-voltage power supplies, and high-voltage conversion modules for grid voltage regulation and stabilization, the K6P53D-VB can withstand higher voltage fluctuations and maintain low power loss.

The K6P53D-VB is a MOSFET that is very suitable for high-voltage applications and has a wide range of application prospects in power conversion and high-efficiency switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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