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K6A60W-VB Product details
Back to previous pageProduct introduction：
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K6A60W-VB is a high voltage N-channel MOSFET in TO220F package, designed for power switching applications. With a VDS (drain-source voltage) of up to 650V, it is suitable for circuits that require strong voltage handling capabilities and low power consumption. The MOSFET has a maximum drain current (ID) of 12A and an RDS(ON) of 680mΩ at a VGS (gate-source voltage) of 10V, ensuring efficient switching operation and reduced conduction losses. Its planar technology provides balanced performance for high-power applications, which are critical in terms of efficiency and durability.
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K6A60W-VB is a high voltage N-channel MOSFET in TO220F package, designed for power switching applications. With a VDS (drain-source voltage) of up to 650V, it is suitable for circuits that require strong voltage handling capabilities and low power consumption. The MOSFET has a maximum drain current (ID) of 12A and an RDS(ON) of 680mΩ at a VGS (gate-source voltage) of 10V, ensuring efficient switching operation and reduced conduction losses. Its planar technology provides balanced performance for high-power applications, which are critical in terms of efficiency and durability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package:** TO220F, a fully isolated package for high power applications, providing good heat dissipation performance and easy installation.
- **Configuration:** Single N-channel, meaning it utilizes a single N-channel type MOSFET, with current flowing from the drain to the source.
- **VDS (Drain-Source Voltage):** 650V, refers to the maximum voltage that the MOSFET can withstand between the drain and the source when it is in the off state.
- **VGS (Gate-Source Voltage):** ±30V, specifies the maximum gate voltage (positive and negative directions) that the MOSFET can withstand.
- **Vth (Threshold Voltage):** 3.5V, the gate-source voltage required to turn on the MOSFET and start conducting.
- **RDS(ON) (On-Resistance):** 680mΩ @ VGS=10V, indicates the resistance between the drain and the source when the MOSFET is in the on state, affecting the conduction loss.
- **ID (drain current):** 12A, the maximum continuous current that the MOSFET can withstand.
- **Technology:** Planar MOSFET, a mature and reliable technology suitable for high power applications.
**
- **Package:** TO220F, a fully isolated package for high power applications, providing good heat dissipation performance and easy installation.
- **Configuration:** Single N-channel, meaning it utilizes a single N-channel type MOSFET, with current flowing from the drain to the source.
- **VDS (Drain-Source Voltage):** 650V, refers to the maximum voltage that the MOSFET can withstand between the drain and the source when it is in the off state.
- **VGS (Gate-Source Voltage):** ±30V, specifies the maximum gate voltage (positive and negative directions) that the MOSFET can withstand.
- **Vth (Threshold Voltage):** 3.5V, the gate-source voltage required to turn on the MOSFET and start conducting.
- **RDS(ON) (On-Resistance):** 680mΩ @ VGS=10V, indicates the resistance between the drain and the source when the MOSFET is in the on state, affecting the conduction loss.
- **ID (drain current):** 12A, the maximum continuous current that the MOSFET can withstand.
- **Technology:** Planar MOSFET, a mature and reliable technology suitable for high power applications.
**
Domain and module applications：
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1. **Power Supply:** The K6A60W-VB can be used in **Switch Mode Power Supplies (SMPS)**, especially in the high voltage section. Its high VDS of 650V makes it ideal for fast and efficient switching in the power conversion stage.
2. **Industrial Motor Drive:** This MOSFET is suitable for **Industrial Motor Control Systems**, where high voltages are common and reliable switching is required. It is capable of handling currents up to 12A, suitable for use in power circuits that drive motors in manufacturing equipment.
3. **Inverter:** In **Solar Systems** or **Uninterruptible Power Supplies (UPS)**, the K6A60W-VB can be used in inverter modules. It helps convert DC power from solar panels or batteries to AC power, and is able to handle the high voltage and current requirements of these energy conversion processes.
4. **High Voltage Lighting Systems:** This MOSFET can be used in **High Voltage Lighting Circuits**, such as **LED Drivers** or **Fluorescent Ballasts**. Its 650V breakdown voltage ensures it can safely control the power supply of high-voltage lighting systems.
These fields and applications benefit from the MOSFET's ability to efficiently switch at high voltages and currents while maintaining durability in harsh environments.
1. **Power Supply:** The K6A60W-VB can be used in **Switch Mode Power Supplies (SMPS)**, especially in the high voltage section. Its high VDS of 650V makes it ideal for fast and efficient switching in the power conversion stage.
2. **Industrial Motor Drive:** This MOSFET is suitable for **Industrial Motor Control Systems**, where high voltages are common and reliable switching is required. It is capable of handling currents up to 12A, suitable for use in power circuits that drive motors in manufacturing equipment.
3. **Inverter:** In **Solar Systems** or **Uninterruptible Power Supplies (UPS)**, the K6A60W-VB can be used in inverter modules. It helps convert DC power from solar panels or batteries to AC power, and is able to handle the high voltage and current requirements of these energy conversion processes.
4. **High Voltage Lighting Systems:** This MOSFET can be used in **High Voltage Lighting Circuits**, such as **LED Drivers** or **Fluorescent Ballasts**. Its 650V breakdown voltage ensures it can safely control the power supply of high-voltage lighting systems.
These fields and applications benefit from the MOSFET's ability to efficiently switch at high voltages and currents while maintaining durability in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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