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K6A55DA-VB Product details
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1. Product Introduction
K6A55DA-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 650V, and the gate voltage (VGS) range is ±30V, ensuring stable operation in high-voltage environments. The device has a turn-on voltage (Vth) of 3.5V, a relatively low on-resistance (RDS(ON)), only 1100mΩ at VGS=10V, and a drain current (ID) of up to 7A. The K6A55DA-VB is designed with Plannar technology and has good switching characteristics, making it suitable for a variety of high-voltage power management and switching circuit applications.
K6A55DA-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as 650V, and the gate voltage (VGS) range is ±30V, ensuring stable operation in high-voltage environments. The device has a turn-on voltage (Vth) of 3.5V, a relatively low on-resistance (RDS(ON)), only 1100mΩ at VGS=10V, and a drain current (ID) of up to 7A. The K6A55DA-VB is designed with Plannar technology and has good switching characteristics, making it suitable for a variety of high-voltage power management and switching circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
3. Application fields and module examples
The excellent performance of K6A55DA-VB MOSFET makes it widely used in many fields and modules, including:
1. **High-voltage power management**: Due to its high drain-source voltage (VDS) of up to 650V, K6A55DA-VB is an ideal choice for high-voltage power management circuits. It can be used in AC-DC and DC-DC converters to effectively improve system efficiency and reduce power consumption.
2. **Switching power supply**: This MOSFET can be used in switching power supply (SMPS) design to provide stable output and efficient power conversion, suitable for various power adapters and chargers.
3. **Inverter and frequency converter**: K6A55DA-VB is suitable for inverter and frequency converter applications, especially in photovoltaic power generation and wind power systems, to achieve efficient energy conversion and control.
4. **Industrial Automation**: In motor drive and industrial control systems, K6A55DA-VB can achieve fast switching, meet high current and high voltage working requirements, and ensure system stability and reliability.
In summary, K6A55DA-VB is widely used in high-voltage power management, switching power supply, inverter, industrial automation and other fields with its high voltage and high current handling capabilities, providing efficient and reliable solutions for these applications.
The excellent performance of K6A55DA-VB MOSFET makes it widely used in many fields and modules, including:
1. **High-voltage power management**: Due to its high drain-source voltage (VDS) of up to 650V, K6A55DA-VB is an ideal choice for high-voltage power management circuits. It can be used in AC-DC and DC-DC converters to effectively improve system efficiency and reduce power consumption.
2. **Switching power supply**: This MOSFET can be used in switching power supply (SMPS) design to provide stable output and efficient power conversion, suitable for various power adapters and chargers.
3. **Inverter and frequency converter**: K6A55DA-VB is suitable for inverter and frequency converter applications, especially in photovoltaic power generation and wind power systems, to achieve efficient energy conversion and control.
4. **Industrial Automation**: In motor drive and industrial control systems, K6A55DA-VB can achieve fast switching, meet high current and high voltage working requirements, and ensure system stability and reliability.
In summary, K6A55DA-VB is widely used in high-voltage power management, switching power supply, inverter, industrial automation and other fields with its high voltage and high current handling capabilities, providing efficient and reliable solutions for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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