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K6A53DA4-VB Product details
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Product Introduction
K6A53DA4-VB is a high-performance single N-channel MOSFET packaged in TO220F. It has a high breakdown voltage of 650V and a maximum drain current of 7A. It is designed for applications that require high voltage and high current. Its maximum on-resistance (RDS(ON) is 1100mΩ @ VGS=10V) enables it to exhibit excellent thermal management capabilities in power switching and control applications. K6A53DA4-VB is widely used in power management, switching power supplies, inverters and other fields, and is an ideal choice for achieving high efficiency and stability.
K6A53DA4-VB is a high-performance single N-channel MOSFET packaged in TO220F. It has a high breakdown voltage of 650V and a maximum drain current of 7A. It is designed for applications that require high voltage and high current. Its maximum on-resistance (RDS(ON) is 1100mΩ @ VGS=10V) enables it to exhibit excellent thermal management capabilities in power switching and control applications. K6A53DA4-VB is widely used in power management, switching power supplies, inverters and other fields, and is an ideal choice for achieving high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology process**: Plannar
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology process**: Plannar
Domain and module applications：
Applications and modules
1. **Switching power supply**: The K6A53DA4-VB is widely used in switching power supply designs. Due to its high breakdown voltage and low on-resistance, the device can effectively reduce switching losses and improve overall conversion efficiency, making it suitable for power supply of various electronic devices, such as computer power supplies and industrial equipment.
2. **Inverter**: This MOSFET performs well in inverter applications and can handle higher voltages and currents, making it suitable for renewable energy applications such as solar inverters and wind power generation systems. Its high efficiency characteristics help optimize energy conversion and improve system reliability and stability.
3. **Motor drive**: In motor control and drive applications, the K6A53DA4-VB can be used as a switching element, especially in applications where high voltage and current are required, such as drive systems for power tools, household appliances, and industrial automation equipment.
4. **High-voltage electronic equipment**: The device is also suitable for high-voltage electronic equipment, such as high-voltage power modules and electronic transformers. Its high withstand voltage characteristics ensure stability and safety in high-voltage working environments, and is suitable for voltage-sensitive applications.
K6A53DA4-VB provides designers with a reliable solution with its excellent performance and wide range of applications, and is the preferred device for high-efficiency circuit design.
1. **Switching power supply**: The K6A53DA4-VB is widely used in switching power supply designs. Due to its high breakdown voltage and low on-resistance, the device can effectively reduce switching losses and improve overall conversion efficiency, making it suitable for power supply of various electronic devices, such as computer power supplies and industrial equipment.
2. **Inverter**: This MOSFET performs well in inverter applications and can handle higher voltages and currents, making it suitable for renewable energy applications such as solar inverters and wind power generation systems. Its high efficiency characteristics help optimize energy conversion and improve system reliability and stability.
3. **Motor drive**: In motor control and drive applications, the K6A53DA4-VB can be used as a switching element, especially in applications where high voltage and current are required, such as drive systems for power tools, household appliances, and industrial automation equipment.
4. **High-voltage electronic equipment**: The device is also suitable for high-voltage electronic equipment, such as high-voltage power modules and electronic transformers. Its high withstand voltage characteristics ensure stability and safety in high-voltage working environments, and is suitable for voltage-sensitive applications.
K6A53DA4-VB provides designers with a reliable solution with its excellent performance and wide range of applications, and is the preferred device for high-efficiency circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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