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K6A45DA-VB Product details
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Product Introduction: K6A45DA-VB MOSFET
K6A45DA-VB is a high voltage, high performance single N-channel MOSFET, packaged in TO220F, designed for 650V high voltage applications. It uses planar technology (Plannar), has a low on-resistance (RDS(ON)), 1100mΩ at VGS=10V, and a maximum on-current of 7A. This makes K6A45DA-VB very suitable for high-efficiency power management and switching applications, especially in situations requiring higher voltage and lower power consumption. Its threshold voltage (Vth) is 3.5V, which is suitable for various gate drive solutions.
K6A45DA-VB is a high voltage, high performance single N-channel MOSFET, packaged in TO220F, designed for 650V high voltage applications. It uses planar technology (Plannar), has a low on-resistance (RDS(ON)), 1100mΩ at VGS=10V, and a maximum on-current of 7A. This makes K6A45DA-VB very suitable for high-efficiency power management and switching applications, especially in situations requiring higher voltage and lower power consumption. Its threshold voltage (Vth) is 3.5V, which is suitable for various gate drive solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum on-current (ID)**: 7A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to 150°C
- **Switching frequency**: Suitable for high-frequency applications
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum on-current (ID)**: 7A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to 150°C
- **Switching frequency**: Suitable for high-frequency applications
Domain and module applications：
Applications and module examples:
1. **Switching Power Supply (SMPS)**: The K6A45DA-VB is ideal for use in switching power supply designs as the main switching element. Its high voltage withstand capability and relatively low on-resistance enable it to excel in efficient power conversion, helping to reduce power consumption and improve efficiency, and is widely used in electronic devices and home appliances.
2. **Motor Drive**: This MOSFET can be used in motor drive circuits, such as DC motor and stepper motor control. Its ability to withstand high voltage and provide good current output ensures smooth motor operation, making it suitable for use in power tools and automation equipment.
3. **Power Electronic Module**: The K6A45DA-VB also performs well in a variety of power electronic modules, especially in inverters and rectifiers. Its efficient switching characteristics can improve the overall performance of the inverter, making it suitable for renewable energy systems and power conditioning applications.
4. **Power Management System**: In complex power management systems, this MOSFET can be used as a power switch to control the flow of current. Its high VDS value and suitable on-resistance enable it to efficiently manage and distribute power, suitable for industrial and communication equipment.
5. **LED drive circuit**: K6A45DA-VB can also be used in the drive circuit of high-power LED lighting. Its low RDS(ON) characteristics can reduce power consumption and heat generation, ensure the stable operation of LED lamps, and are suitable for commercial and residential lighting systems.
1. **Switching Power Supply (SMPS)**: The K6A45DA-VB is ideal for use in switching power supply designs as the main switching element. Its high voltage withstand capability and relatively low on-resistance enable it to excel in efficient power conversion, helping to reduce power consumption and improve efficiency, and is widely used in electronic devices and home appliances.
2. **Motor Drive**: This MOSFET can be used in motor drive circuits, such as DC motor and stepper motor control. Its ability to withstand high voltage and provide good current output ensures smooth motor operation, making it suitable for use in power tools and automation equipment.
3. **Power Electronic Module**: The K6A45DA-VB also performs well in a variety of power electronic modules, especially in inverters and rectifiers. Its efficient switching characteristics can improve the overall performance of the inverter, making it suitable for renewable energy systems and power conditioning applications.
4. **Power Management System**: In complex power management systems, this MOSFET can be used as a power switch to control the flow of current. Its high VDS value and suitable on-resistance enable it to efficiently manage and distribute power, suitable for industrial and communication equipment.
5. **LED drive circuit**: K6A45DA-VB can also be used in the drive circuit of high-power LED lighting. Its low RDS(ON) characteristics can reduce power consumption and heat generation, ensure the stable operation of LED lamps, and are suitable for commercial and residential lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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