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K60P03M1-VB Product details
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K60P03M1-VB MOSFET Product Introduction:
K60P03M1-VB is a high-performance single N-channel MOSFET in TO252 package with low on-resistance and high current handling capability. The device is suitable for 30V low-voltage applications, with a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The device has an on-resistance of 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, and can handle a continuous drain current (ID) of up to 100A. K60P03M1-VB uses advanced trench technology and has efficient power conversion performance, making it particularly suitable for circuits that require high current and high energy efficiency.
K60P03M1-VB is a high-performance single N-channel MOSFET in TO252 package with low on-resistance and high current handling capability. The device is suitable for 30V low-voltage applications, with a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V. The device has an on-resistance of 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, and can handle a continuous drain current (ID) of up to 100A. K60P03M1-VB uses advanced trench technology and has efficient power conversion performance, making it particularly suitable for circuits that require high current and high energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **Package:** TO252 – With good thermal performance, suitable for compact circuit design.
2. **Configuration:** Single N-channel – For power conversion and switch control.
3. **VDS (drain-source voltage):** 30V – Suitable for low-voltage application scenarios.
4. **VGS (gate-source voltage):** ±20V – Provides good driving flexibility.
5. **Vth (threshold voltage):** 1.7V – Lower turn-on voltage, suitable for low-power drive.
6. **RDS(ON) (on-resistance):**
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V – Very low on-resistance, reducing power loss and improving energy efficiency.
7. **ID (continuous leakage current):** 100A – Suitable for high-current applications, ensuring high power handling.
8. **Technology:** Trench technology – provides efficient switching characteristics and lower conduction losses.
1. **Package:** TO252 – With good thermal performance, suitable for compact circuit design.
2. **Configuration:** Single N-channel – For power conversion and switch control.
3. **VDS (drain-source voltage):** 30V – Suitable for low-voltage application scenarios.
4. **VGS (gate-source voltage):** ±20V – Provides good driving flexibility.
5. **Vth (threshold voltage):** 1.7V – Lower turn-on voltage, suitable for low-power drive.
6. **RDS(ON) (on-resistance):**
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V – Very low on-resistance, reducing power loss and improving energy efficiency.
7. **ID (continuous leakage current):** 100A – Suitable for high-current applications, ensuring high power handling.
8. **Technology:** Trench technology – provides efficient switching characteristics and lower conduction losses.
Domain and module applications：
Application examples:
The high current handling capability and low on-resistance of the K60P03M1-VB MOSFET enable it to excel in a variety of applications. The following are typical application scenarios for this device:
- **Power tools and motor drives:** This device is suitable for use in power tools and DC motor drives. Due to its high current carrying capacity and low on-resistance, it can improve the operating efficiency of the equipment and reduce energy loss.
- **Automotive electronic systems:** The K60P03M1-VB is suitable for use in automotive power management and control modules, especially in power distribution modules, battery management systems, and electric drive control systems, helping to optimize energy distribution and improve circuit stability.
- **Power management modules (DC-DC converters):** This MOSFET is also widely used in DC-DC power management systems, especially in switching power supplies that require high efficiency and high current output, such as power management of servers, routers and other equipment.
- **Load switch:** Due to its extremely low on-resistance, the K60P03M1-VB is very suitable for use as a switching element for high current loads, ensuring the efficiency and stability of power transmission, and is suitable for use in home appliances, lighting and other equipment.
- **Solar inverter:** This MOSFET can be used for power conversion and energy management in photovoltaic systems, and achieve efficient DC to AC conversion in inverter modules.
In general, the K60P03M1-VB MOSFET is particularly suitable for use in power tools, automotive electronics, power management modules and solar systems with its excellent low on-resistance and high current capability, providing efficient power control and conversion solutions.
The high current handling capability and low on-resistance of the K60P03M1-VB MOSFET enable it to excel in a variety of applications. The following are typical application scenarios for this device:
- **Power tools and motor drives:** This device is suitable for use in power tools and DC motor drives. Due to its high current carrying capacity and low on-resistance, it can improve the operating efficiency of the equipment and reduce energy loss.
- **Automotive electronic systems:** The K60P03M1-VB is suitable for use in automotive power management and control modules, especially in power distribution modules, battery management systems, and electric drive control systems, helping to optimize energy distribution and improve circuit stability.
- **Power management modules (DC-DC converters):** This MOSFET is also widely used in DC-DC power management systems, especially in switching power supplies that require high efficiency and high current output, such as power management of servers, routers and other equipment.
- **Load switch:** Due to its extremely low on-resistance, the K60P03M1-VB is very suitable for use as a switching element for high current loads, ensuring the efficiency and stability of power transmission, and is suitable for use in home appliances, lighting and other equipment.
- **Solar inverter:** This MOSFET can be used for power conversion and energy management in photovoltaic systems, and achieve efficient DC to AC conversion in inverter modules.
In general, the K60P03M1-VB MOSFET is particularly suitable for use in power tools, automotive electronics, power management modules and solar systems with its excellent low on-resistance and high current capability, providing efficient power control and conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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