K5P53D-VB Product details
Product introduction:
K5P53D-VB is a high voltage single N-channel MOSFET in TO252 package based on SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology. The device has a drain-source voltage (VDS) of 650V and a drain current (ID) of 5A. Its on-resistance (RDS(ON)) is 1000mΩ@ VGS=10V and the gate threshold voltage (Vth) is 3.5V. This MOSFET is suitable for high voltage applications, especially in power management, inverters and motor control, providing excellent and efficient power switching characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epi) Technology
The K5P53D-VB is designed to optimize power transmission in high-voltage applications by using superjunction technology, and is suitable for a variety of application scenarios requiring high-voltage, high-efficiency switching.
Domain and module applications:
1. **High-voltage converters and inverters**
The 650V drain-source voltage of the K5P53D-VB makes it ideal for use in high-voltage converters and inverters, especially in industrial and household inverters. Its high-voltage withstand capability can handle high-power voltage conversion, ensure power transmission efficiency, and is suitable for uninterruptible power supplies (UPS) and high-efficiency energy conversion equipment.
2. **LED drive circuits**
The K5P53D-VB can also be used in high-voltage LED drive circuits. Its high-voltage and low-loss characteristics, combined with the low conduction losses brought by superjunction technology, help improve the overall efficiency of LED drive circuits, and are suitable for industrial lighting and outdoor high-brightness LED lamps.
3. **Power conversion and power management**
In power conversion modules, the K5P53D-VB can be used as a key switching element for high-voltage power converters, such as AC-DC and DC-DC converters. These converters are widely used in power management systems, charging stations, and industrial power equipment. The MOSFET ensures efficient and reliable power conversion under high voltage conditions.
4. **Motor Drive and Industrial Control Systems**
In motor control and drive systems that need to handle high voltages, the K5P53D-VB can also provide stable switching performance. Its 650V withstand voltage characteristics make it suitable for industrial automation equipment, pump control systems, and other industrial motor drive systems that require high efficiency and high reliability.
The K5P53D-VB is suitable for high-voltage power management, high-efficiency LED drive circuits, industrial control systems, and other fields. It can provide low-loss power transmission under high voltage environments and optimize the energy efficiency of the system.
Technical support:
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