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K5P53D-VB Product details

Product introduction:

Product Introduction - K5P53D-VB

K5P53D-VB is a high voltage single N-channel MOSFET in TO252 package based on SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology. The device has a drain-source voltage (VDS) of 650V and a drain current (ID) of 5A. Its on-resistance (RDS(ON)) is 1000mΩ@ VGS=10V and the gate threshold voltage (Vth) is 3.5V. This MOSFET is suitable for high voltage applications, especially in power management, inverters and motor control, providing excellent and efficient power switching characteristics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epi) Technology

The K5P53D-VB is designed to optimize power transmission in high-voltage applications by using superjunction technology, and is suitable for a variety of application scenarios requiring high-voltage, high-efficiency switching.

Domain and module applications:

Applications and module examples

1. **High-voltage converters and inverters**
The 650V drain-source voltage of the K5P53D-VB makes it ideal for use in high-voltage converters and inverters, especially in industrial and household inverters. Its high-voltage withstand capability can handle high-power voltage conversion, ensure power transmission efficiency, and is suitable for uninterruptible power supplies (UPS) and high-efficiency energy conversion equipment.

2. **LED drive circuits**
The K5P53D-VB can also be used in high-voltage LED drive circuits. Its high-voltage and low-loss characteristics, combined with the low conduction losses brought by superjunction technology, help improve the overall efficiency of LED drive circuits, and are suitable for industrial lighting and outdoor high-brightness LED lamps.

3. **Power conversion and power management**
In power conversion modules, the K5P53D-VB can be used as a key switching element for high-voltage power converters, such as AC-DC and DC-DC converters. These converters are widely used in power management systems, charging stations, and industrial power equipment. The MOSFET ensures efficient and reliable power conversion under high voltage conditions.

4. **Motor Drive and Industrial Control Systems**
In motor control and drive systems that need to handle high voltages, the K5P53D-VB can also provide stable switching performance. Its 650V withstand voltage characteristics make it suitable for industrial automation equipment, pump control systems, and other industrial motor drive systems that require high efficiency and high reliability.

The K5P53D-VB is suitable for high-voltage power management, high-efficiency LED drive circuits, industrial control systems, and other fields. It can provide low-loss power transmission under high voltage environments and optimize the energy efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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