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K58A06N1-VB Product details
Back to previous pageProduct introduction：
：**
K58A06N1-VB is a high-performance single N-channel MOSFET in TO220F package, suitable for medium and low voltage high current applications. It has a breakdown voltage of 60V, has good voltage tolerance, and provides an on-resistance as low as 5mΩ at VGS=10V, which allows it to maintain low losses at high currents. The maximum drain current can reach 120A, with excellent current handling capabilities. The device uses Trench technology to improve switching performance and conductive characteristics, suitable for use in occasions requiring high efficiency and thermal management, and is an ideal choice for high-power switching circuits.
**
K58A06N1-VB is a high-performance single N-channel MOSFET in TO220F package, suitable for medium and low voltage high current applications. It has a breakdown voltage of 60V, has good voltage tolerance, and provides an on-resistance as low as 5mΩ at VGS=10V, which allows it to maintain low losses at high currents. The maximum drain current can reach 120A, with excellent current handling capabilities. The device uses Trench technology to improve switching performance and conductive characteristics, suitable for use in occasions requiring high efficiency and thermal management, and is an ideal choice for high-power switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
：**
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Breakdown voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology process**: Trench
**
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Breakdown voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology process**: Trench
**
Domain and module applications：
：**
1. **Motor Control**: K58A06N1-VB is well suited for motor drives, especially in applications requiring high current and low on-resistance. Its high current capability of 120A and low on-resistance ensure efficient operation of the motor under high load, and is widely used in industrial motor control and automotive power tools.
2. **Power Management**: This MOSFET is suitable for use as an efficient load switch and power management device, especially high-power DC-DC converters and AC-DC power modules. In power management systems, low on-resistance can reduce power consumption and help the system achieve higher conversion efficiency.
3. **Battery Management System**: K58A06N1-VB can be used as a switching element in a battery management system (BMS) to control the battery charging and discharging process. Its low conduction loss and high current capability ensure the stability of the battery pack at high loads and high power output, and is suitable for electric vehicles and energy storage systems.
4. **High-power LED driver**: This MOSFET is suitable for high-power LED driver circuits, especially in situations where high current output is required. Its low on-resistance and high current capability ensure high efficiency and low heat loss of the LED during operation, and is used in commercial and industrial lighting control.
K58A06N1-VB is an ideal choice for various high-power electronic designs due to its strong current handling capability, low conduction loss and excellent thermal performance. It is widely used in power management, motor control and high current switching applications.
1. **Motor Control**: K58A06N1-VB is well suited for motor drives, especially in applications requiring high current and low on-resistance. Its high current capability of 120A and low on-resistance ensure efficient operation of the motor under high load, and is widely used in industrial motor control and automotive power tools.
2. **Power Management**: This MOSFET is suitable for use as an efficient load switch and power management device, especially high-power DC-DC converters and AC-DC power modules. In power management systems, low on-resistance can reduce power consumption and help the system achieve higher conversion efficiency.
3. **Battery Management System**: K58A06N1-VB can be used as a switching element in a battery management system (BMS) to control the battery charging and discharging process. Its low conduction loss and high current capability ensure the stability of the battery pack at high loads and high power output, and is suitable for electric vehicles and energy storage systems.
4. **High-power LED driver**: This MOSFET is suitable for high-power LED driver circuits, especially in situations where high current output is required. Its low on-resistance and high current capability ensure high efficiency and low heat loss of the LED during operation, and is used in commercial and industrial lighting control.
K58A06N1-VB is an ideal choice for various high-power electronic designs due to its strong current handling capability, low conduction loss and excellent thermal performance. It is widely used in power management, motor control and high current switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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