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K53S60-VB Product details
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1. Product Introduction
K53S60-VB is a high-efficiency N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for various high-voltage power management and switching applications. The threshold voltage (Vth) of the device is 3.5V, which ensures excellent switching performance and can operate reliably at lower drive voltages. The on-resistance (RDS(ON)) of K53S60-VB is only 75mΩ at VGS of 10V. This low value helps to reduce power loss during high current operation and improve the efficiency of the overall system. Its maximum continuous drain current (ID) can reach 47A, which is suitable for various power conversion and control scenarios. K53S60-VB adopts SJ_Multi-EPI technology and has excellent thermal management capabilities and reliability, making it very suitable for industrial and high-performance electronic applications.
K53S60-VB is a high-efficiency N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for various high-voltage power management and switching applications. The threshold voltage (Vth) of the device is 3.5V, which ensures excellent switching performance and can operate reliably at lower drive voltages. The on-resistance (RDS(ON)) of K53S60-VB is only 75mΩ at VGS of 10V. This low value helps to reduce power loss during high current operation and improve the efficiency of the overall system. Its maximum continuous drain current (ID) can reach 47A, which is suitable for various power conversion and control scenarios. K53S60-VB adopts SJ_Multi-EPI technology and has excellent thermal management capabilities and reliability, making it very suitable for industrial and high-performance electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Other performance**: K53S60-VB is designed with optimization and has excellent switching characteristics. It is suitable for high-frequency and high-power applications, ensuring the reliability and efficiency of the system under high load conditions.
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Other performance**: K53S60-VB is designed with optimization and has excellent switching characteristics. It is suitable for high-frequency and high-power applications, ensuring the reliability and efficiency of the system under high load conditions.
Domain and module applications：
3. Application fields and modules
K53S60-VB is widely used in multiple fields and modules due to its high voltage and high current handling capabilities, including:
1. **Power converter**: This MOSFET performs well in DC-DC converters and switching power supplies, especially in application scenarios requiring high voltage and high current, such as industrial power supplies, servers and communication equipment, and can effectively achieve voltage regulation and energy conversion.
2. **Motor drive**: Due to its maximum drain current of up to 47A, K53S60-VB is very suitable for motor drivers and control modules, and is widely used in electric vehicles, industrial automation and robotics, providing efficient motor control and drive capabilities.
3. **Automotive electronics**: In the power management and control systems of modern automobiles, K53S60-VB can be used in battery management systems and power distribution modules, which can maintain stable performance under high voltage environments and ensure the safety and reliability of automotive electrical systems.
4. **Lighting system**: This MOSFET is also suitable for high-power LED drive circuits. In areas such as commercial lighting and smart homes, K53S60-VB can achieve efficient switch control, reduce energy consumption, and improve system performance.
In summary, K53S60-VB has become an ideal choice for high-voltage power management and drive control solutions with its excellent performance and wide application applicability.
K53S60-VB is widely used in multiple fields and modules due to its high voltage and high current handling capabilities, including:
1. **Power converter**: This MOSFET performs well in DC-DC converters and switching power supplies, especially in application scenarios requiring high voltage and high current, such as industrial power supplies, servers and communication equipment, and can effectively achieve voltage regulation and energy conversion.
2. **Motor drive**: Due to its maximum drain current of up to 47A, K53S60-VB is very suitable for motor drivers and control modules, and is widely used in electric vehicles, industrial automation and robotics, providing efficient motor control and drive capabilities.
3. **Automotive electronics**: In the power management and control systems of modern automobiles, K53S60-VB can be used in battery management systems and power distribution modules, which can maintain stable performance under high voltage environments and ensure the safety and reliability of automotive electrical systems.
4. **Lighting system**: This MOSFET is also suitable for high-power LED drive circuits. In areas such as commercial lighting and smart homes, K53S60-VB can achieve efficient switch control, reduce energy consumption, and improve system performance.
In summary, K53S60-VB has become an ideal choice for high-voltage power management and drive control solutions with its excellent performance and wide application applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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