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K4P60D-VB Product details

Product introduction:

Product Introduction – K4P60D-VB

K4P60D-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high efficiency applications. Its drain-source voltage (VDS) can reach 650V, the gate voltage (VGS) range is ±30V, and the turn-on threshold voltage (Vth) is 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 1000mΩ@VGS=10V, and the maximum drain current (ID) is 5A. K4P60D-VB uses advanced SJ_Multi-EPI technology, has excellent electrical characteristics and high reliability, and is widely used in power management, industrial control and consumer electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Maximum power dissipation (Pd)**: 20W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Reverse recovery time (trr)**: Suitable for low frequency applications
- **Gate charge (Qg)**: Lower, increase switching speed

Domain and module applications:

Application fields and module examples

1. **Switching Power Supplies**
K4P60D-VB is widely used in switching power supply modules, suitable for AC-DC and DC-DC converters. This MOSFET has excellent conduction performance, which can effectively improve the conversion efficiency of the power supply and ensure the stability of the output voltage.

2. **LED Drivers**
This MOSFET can be used in the drive circuit of LED lighting systems. The high voltage capability and low on-resistance of K4P60D-VB enable it to drive high-power LEDs and achieve efficient light source output, suitable for commercial and home lighting applications.

3. **Motor Control**
K4P60D-VB can be used to control DC motors and stepper motors, suitable for motor drive systems. Its high voltage resistance and high current capability can meet the drive requirements of different motors and is widely used in automation equipment and industrial control.

4. **Power Inverters**
In solar and uninterruptible power supply (UPS) systems, K4P60D-VB can be used as a switching element in power inverters. Its high voltage characteristics and reliability ensure efficient DC to AC conversion, suitable for renewable energy applications.

5. **Industrial Control**
K4P60D-VB is also suitable for switch control of industrial automation systems. It can be used to control high-power loads such as heaters and welding equipment, and exhibits good performance and stability in various harsh working environments.

The high performance characteristics of K4P60D-VB make it a key component in the field of power management and control, meeting the requirements of modern electronic equipment for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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