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K4A50D-VB Product details
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1. K4A50D-VB MOSFET Product Introduction
K4A50D-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for applications requiring 650V voltage. This MOSFET has a maximum gate-source voltage (VGS) of ±30V and a turn-on threshold voltage (Vth) of 3.5V, suitable for applications with medium current requirements, and a maximum drain current (ID) of 4A. Its on-resistance (RDS(ON)) is 2560mΩ at VGS=10V, ensuring low power consumption during switching and conduction. K4A50D-VB uses planar process (Plannar) technology, which can provide stable performance in a variety of high-voltage applications.
K4A50D-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for applications requiring 650V voltage. This MOSFET has a maximum gate-source voltage (VGS) of ±30V and a turn-on threshold voltage (Vth) of 3.5V, suitable for applications with medium current requirements, and a maximum drain current (ID) of 4A. Its on-resistance (RDS(ON)) is 2560mΩ at VGS=10V, ensuring low power consumption during switching and conduction. K4A50D-VB uses planar process (Plannar) technology, which can provide stable performance in a variety of high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. K4A50D-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology type**: Plannar
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology type**: Plannar
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
3. Application fields and modules of K4A50D-VB MOSFET
1. **High-voltage power management**
K4A50D-VB is suitable for high-voltage power management systems such as switching power supplies and DC-DC converters. It can withstand voltages up to 650V and convert power at high efficiency to reduce system heat loss.
2. **Motor drive**
This MOSFET can be used in medium and low power motor drive applications, especially in situations where high-voltage start and stop control is required. It can control the switching of current in motor drive circuits to achieve efficient motor control.
3. **Inverter**
K4A50D-VB is also widely used in solar inverters and other renewable energy systems. Its high voltage tolerance makes it an ideal choice to provide reliable switching control during the inverter process and improve system efficiency.
4. **Battery Management System**
In the battery management system, K4A50D-VB can be used as a switching element to help monitor and control the battery charging and discharging process. It can ensure safe and efficient battery use, especially in electric vehicles and mobile devices.
5. **Home Appliance Applications**
This MOSFET is also suitable for high-voltage home appliance control, such as air conditioners, washing machines, and electric water heaters. Its high voltage capability and stable conduction performance ensure safety and efficiency in these applications.
In summary, with its high voltage and medium current characteristics, K4A50D-VB is suitable for a variety of applications that require high voltage control, becoming an important part of high-efficiency power management and drive solutions.
1. **High-voltage power management**
K4A50D-VB is suitable for high-voltage power management systems such as switching power supplies and DC-DC converters. It can withstand voltages up to 650V and convert power at high efficiency to reduce system heat loss.
2. **Motor drive**
This MOSFET can be used in medium and low power motor drive applications, especially in situations where high-voltage start and stop control is required. It can control the switching of current in motor drive circuits to achieve efficient motor control.
3. **Inverter**
K4A50D-VB is also widely used in solar inverters and other renewable energy systems. Its high voltage tolerance makes it an ideal choice to provide reliable switching control during the inverter process and improve system efficiency.
4. **Battery Management System**
In the battery management system, K4A50D-VB can be used as a switching element to help monitor and control the battery charging and discharging process. It can ensure safe and efficient battery use, especially in electric vehicles and mobile devices.
5. **Home Appliance Applications**
This MOSFET is also suitable for high-voltage home appliance control, such as air conditioners, washing machines, and electric water heaters. Its high voltage capability and stable conduction performance ensure safety and efficiency in these applications.
In summary, with its high voltage and medium current characteristics, K4A50D-VB is suitable for a variety of applications that require high voltage control, becoming an important part of high-efficiency power management and drive solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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