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K45S06K3L-VB Product details
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K45S06K3L-VB MOSFET Product Introduction:
K45S06K3L-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium and low voltage applications. Its drain-to-source voltage (VDS) is 60V and the gate-to-source voltage (VGS) is ±20V, which can operate stably under a variety of conditions. The threshold voltage (Vth) of the device is 2.5V, which allows it to be turned on at a lower drive voltage. When VGS is 4.5V, the on-resistance (RDS(ON)) of K45S06K3L-VB is 13mΩ, and when VGS is 10V, the on-resistance is further reduced to 10mΩ. Such a low on-resistance allows the device to support a continuous drain current (ID) of up to 58A, which is very suitable for applications that require efficient power management. This MOSFET uses Trench technology and has excellent electrical and heat dissipation performance.
K45S06K3L-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium and low voltage applications. Its drain-to-source voltage (VDS) is 60V and the gate-to-source voltage (VGS) is ±20V, which can operate stably under a variety of conditions. The threshold voltage (Vth) of the device is 2.5V, which allows it to be turned on at a lower drive voltage. When VGS is 4.5V, the on-resistance (RDS(ON)) of K45S06K3L-VB is 13mΩ, and when VGS is 10V, the on-resistance is further reduced to 10mΩ. Such a low on-resistance allows the device to support a continuous drain current (ID) of up to 58A, which is very suitable for applications that require efficient power management. This MOSFET uses Trench technology and has excellent electrical and heat dissipation performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **Package:** TO252 – Small package, suitable for high power applications.
2. **Configuration:** Single N-channel – Suitable for a variety of switches and amplifier circuits.
3. **VDS (Drain to Source Voltage):** 60V – Suitable for medium and low voltage applications.
4. **VGS (Gate to Source Voltage):** ±20V – Provides stable gate drive capability.
5. **Vth (Threshold Voltage):** 2.5V – Low threshold voltage, suitable for low voltage drive.
6. **RDS(ON) (Drain to Source On Resistance):**
- 13mΩ @ VGS = 4.5V – Low on resistance, suitable for high efficiency applications.
- 10mΩ @ VGS = 10V – Lower on resistance, suitable for high current applications.
7. **ID (Continuous Drain Current):** 58A – Supports high loads and is suitable for various power management applications.
8. **Technology:** Trench – Provides lower on-resistance and efficient power conversion.
1. **Package:** TO252 – Small package, suitable for high power applications.
2. **Configuration:** Single N-channel – Suitable for a variety of switches and amplifier circuits.
3. **VDS (Drain to Source Voltage):** 60V – Suitable for medium and low voltage applications.
4. **VGS (Gate to Source Voltage):** ±20V – Provides stable gate drive capability.
5. **Vth (Threshold Voltage):** 2.5V – Low threshold voltage, suitable for low voltage drive.
6. **RDS(ON) (Drain to Source On Resistance):**
- 13mΩ @ VGS = 4.5V – Low on resistance, suitable for high efficiency applications.
- 10mΩ @ VGS = 10V – Lower on resistance, suitable for high current applications.
7. **ID (Continuous Drain Current):** 58A – Supports high loads and is suitable for various power management applications.
8. **Technology:** Trench – Provides lower on-resistance and efficient power conversion.
Domain and module applications：
Application Examples:
The K45S06K3L-VB MOSFET is suitable for a wide range of applications due to its excellent current carrying capacity and low on-resistance. Here are some specific application scenarios:
- **Power Management Modules:** This MOSFET is widely used in DC-DC converters and power regulators, which can efficiently convert the input voltage to the required output, ensuring stability and reliability under high current loads.
- **Power Tools:** In the motor drive of high-power power tools, the K45S06K3L-VB can be used as a switching element to support currents up to 58A, ensuring efficient operation of the tools under various load conditions.
- **Electric Vehicles (EV):** This device can be used in power management and battery control systems in electric vehicles, providing efficient energy conversion and ensuring battery stability and safety.
- **Consumer Electronics:** The K45S06K3L-VB is suitable for power management modules of high-performance consumer electronic devices such as smartphones and laptops to achieve efficient energy consumption control.
- **Lighting control:** In LED drive circuits, this MOSFET provides stable current control, ensuring high efficiency and long life of LED lighting systems.
In summary, the K45S06K3L-VB MOSFET has a wide range of application potentials in power management modules, power tools, electric vehicles and consumer electronics with its excellent low on-resistance, high current capability and efficient Trench technology, ensuring efficient power conversion and stable current control.
The K45S06K3L-VB MOSFET is suitable for a wide range of applications due to its excellent current carrying capacity and low on-resistance. Here are some specific application scenarios:
- **Power Management Modules:** This MOSFET is widely used in DC-DC converters and power regulators, which can efficiently convert the input voltage to the required output, ensuring stability and reliability under high current loads.
- **Power Tools:** In the motor drive of high-power power tools, the K45S06K3L-VB can be used as a switching element to support currents up to 58A, ensuring efficient operation of the tools under various load conditions.
- **Electric Vehicles (EV):** This device can be used in power management and battery control systems in electric vehicles, providing efficient energy conversion and ensuring battery stability and safety.
- **Consumer Electronics:** The K45S06K3L-VB is suitable for power management modules of high-performance consumer electronic devices such as smartphones and laptops to achieve efficient energy consumption control.
- **Lighting control:** In LED drive circuits, this MOSFET provides stable current control, ensuring high efficiency and long life of LED lighting systems.
In summary, the K45S06K3L-VB MOSFET has a wide range of application potentials in power management modules, power tools, electric vehicles and consumer electronics with its excellent low on-resistance, high current capability and efficient Trench technology, ensuring efficient power conversion and stable current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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