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K42S60L-VB Product details

Product introduction:

Product Introduction – K42S60L-VB

The K42S60L-VB is a high voltage single N-channel MOSFET in a TO247 package, designed for high voltage and medium power applications. The MOSFET has a drain-source voltage (VDS) of up to 650V, a gate voltage (VGS) range of ±30V, a turn-on threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 75mΩ@VGS=10V, and a maximum drain current (ID) of up to 47A. The K42S60L-VB uses advanced SJ_Multi-EPI technology, has excellent thermal stability and high performance, and is suitable for various power conversion and control applications such as power management, switching power supplies and inverters.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 75mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description

- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ@VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Maximum power dissipation (Pd)**: 35W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Reverse recovery time (trr)**: Short, suitable for high frequency switching applications
- **Gate charge (Qg)**: Lower, helps to increase switching speed

Domain and module applications:

Application fields and module examples

1. **Power Management**
K42S60L-VB performs well in power management systems and is suitable for use in devices such as high-voltage switching power supplies, DC-DC converters and power adapters. Its high voltage and high current characteristics can provide efficient power conversion, ensuring stable operation and energy efficiency optimization of the equipment.

2. **Inverters**
This MOSFET can be used in inverter applications, especially in photovoltaic inverters and wind power inverters. It can withstand drain-source voltages up to 650V, enabling efficient power conversion in solar and wind power generation systems.

3. **Electric Vehicles**
The high voltage and high current capabilities of K42S60L-VB make it an ideal choice for power management and drive systems in electric vehicles. It can effectively control the motor and battery charging system, improving the energy efficiency and reliability of the entire vehicle.

4. **Industrial Control**
In industrial automation and control systems, this MOSFET can be used as a switching element to drive high-power loads. Its high withstand voltage characteristics enable it to operate reliably in harsh environments and is suitable for applications such as motor drive and heater control.

5. **LED Lighting**
K42S60L-VB is also suitable for LED lighting systems as a power switch and driver. It can efficiently regulate current to ensure the brightness and stability of LED lighting and is widely used in commercial and home lighting.

The high performance and wide applicability of the K42S60L-VB make it an important component in the field of power management and power conversion, and can meet a variety of high-efficiency and high-reliability application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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