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K4213-ZK-E1-VB Product details
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K4213-ZK-E1-VB MOSFET Product Introduction:
K4213-ZK-E1-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low voltage applications. The device has a drain-to-source voltage (VDS) of 30V and a gate-to-source voltage (VGS) tolerance of ±20V, capable of operating under higher current conditions. Its threshold voltage (Vth) is 1.7V, ensuring efficient conduction at low voltage. The K4213-ZK-E1-VB has an on-resistance (RDS(ON)) of only 3mΩ at a VGS of 4.5V, and further reduced to 2mΩ at a VGS of 10V, supporting a continuous leakage current (ID) of up to 100A, making it an ideal choice for high-efficiency power management and switching applications. This MOSFET uses Trench technology and has excellent power conversion efficiency and thermal performance.
K4213-ZK-E1-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low voltage applications. The device has a drain-to-source voltage (VDS) of 30V and a gate-to-source voltage (VGS) tolerance of ±20V, capable of operating under higher current conditions. Its threshold voltage (Vth) is 1.7V, ensuring efficient conduction at low voltage. The K4213-ZK-E1-VB has an on-resistance (RDS(ON)) of only 3mΩ at a VGS of 4.5V, and further reduced to 2mΩ at a VGS of 10V, supporting a continuous leakage current (ID) of up to 100A, making it an ideal choice for high-efficiency power management and switching applications. This MOSFET uses Trench technology and has excellent power conversion efficiency and thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **Package:** TO252 – Small package, suitable for high power applications.
2. **Configuration:** Single N-channel – Can be used in a variety of switching and amplification circuits.
3. **VDS (Drain to Source Voltage):** 30V – Suitable for low voltage applications.
4. **VGS (Gate to Source Voltage):** ±20V – Provides stable gate drive capability.
5. **Vth (Threshold Voltage):** 1.7V – Low threshold voltage, suitable for low voltage drive.
6. **RDS(ON) (Drain to Source On Resistance):**
- 3mΩ @ VGS = 4.5V – Low on resistance, suitable for high efficiency applications.
- 2mΩ @ VGS = 10V – Lower on resistance, suitable for high current applications.
7. **ID (Continuous Drain Current):** 100A – Supports high loads and is suitable for various power management applications.
8. **Technology:** Trench – Provides lower on-resistance and efficient power conversion.
1. **Package:** TO252 – Small package, suitable for high power applications.
2. **Configuration:** Single N-channel – Can be used in a variety of switching and amplification circuits.
3. **VDS (Drain to Source Voltage):** 30V – Suitable for low voltage applications.
4. **VGS (Gate to Source Voltage):** ±20V – Provides stable gate drive capability.
5. **Vth (Threshold Voltage):** 1.7V – Low threshold voltage, suitable for low voltage drive.
6. **RDS(ON) (Drain to Source On Resistance):**
- 3mΩ @ VGS = 4.5V – Low on resistance, suitable for high efficiency applications.
- 2mΩ @ VGS = 10V – Lower on resistance, suitable for high current applications.
7. **ID (Continuous Drain Current):** 100A – Supports high loads and is suitable for various power management applications.
8. **Technology:** Trench – Provides lower on-resistance and efficient power conversion.
Domain and module applications：
Application Examples:
The K4213-ZK-E1-VB MOSFET is suitable for a variety of fields and modules due to its low on-resistance and high current carrying capacity. Here are some specific application scenarios:
- **Power Management System:** This MOSFET is widely used in DC-DC converters and power regulators to efficiently convert the input voltage to the required output, ensuring the stability and reliability of the equipment under high current loads.
- **Power Tools:** In the motor drive of high-power power tools, the K4213-ZK-E1-VB can be used as a switching element to support currents up to 100A, ensuring efficient operation of the tool under various load conditions.
- **Electric Vehicles (EV):** The device can be used in power management and battery control systems for electric vehicles, providing efficient energy conversion and ensuring battery stability and safety.
- **Consumer Electronics:** The K4213-ZK-E1-VB is suitable for high-performance consumer electronic devices such as power management modules for smartphones and laptops to achieve efficient energy consumption control.
- **Lighting control:** In LED drive circuits, this MOSFET provides stable current control, ensuring high efficiency and long life of LED lighting systems.
In summary, the K4213-ZK-E1-VB MOSFET has a wide range of application potentials in power management systems, power tools, electric vehicles and consumer electronics with its excellent low on-resistance, high current capability and efficient Trench technology, ensuring efficient power conversion and stable current control.
The K4213-ZK-E1-VB MOSFET is suitable for a variety of fields and modules due to its low on-resistance and high current carrying capacity. Here are some specific application scenarios:
- **Power Management System:** This MOSFET is widely used in DC-DC converters and power regulators to efficiently convert the input voltage to the required output, ensuring the stability and reliability of the equipment under high current loads.
- **Power Tools:** In the motor drive of high-power power tools, the K4213-ZK-E1-VB can be used as a switching element to support currents up to 100A, ensuring efficient operation of the tool under various load conditions.
- **Electric Vehicles (EV):** The device can be used in power management and battery control systems for electric vehicles, providing efficient energy conversion and ensuring battery stability and safety.
- **Consumer Electronics:** The K4213-ZK-E1-VB is suitable for high-performance consumer electronic devices such as power management modules for smartphones and laptops to achieve efficient energy consumption control.
- **Lighting control:** In LED drive circuits, this MOSFET provides stable current control, ensuring high efficiency and long life of LED lighting systems.
In summary, the K4213-ZK-E1-VB MOSFET has a wide range of application potentials in power management systems, power tools, electric vehicles and consumer electronics with its excellent low on-resistance, high current capability and efficient Trench technology, ensuring efficient power conversion and stable current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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