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K4212-ZK-E1-VB Product details

Product introduction:

Product Introduction:
K4212-ZK-E1-VB is a single N-channel MOSFET in a TO-252 package, designed for high efficiency and high current applications. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V. The turn-on voltage (Vth) is 1.7V, and the on-resistance RDS(ON) is 6mΩ at a VGS of 4.5V, and drops to 5mΩ at a VGS of 10V, showing its excellent conductive performance. The K4212-ZK-E1-VB has a maximum drain current (ID) of 80A and uses Trench technology to ensure low power consumption and high efficiency, making it very suitable for use in various power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 80A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description:
- **Package type**: TO-252 (small package, suitable for high power density applications)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench technology, providing lower on-resistance and higher switching efficiency
- **Thermal performance**: TO-252 package ensures good heat dissipation capability, suitable for high current operation

Domain and module applications:

Applicable fields and modules:
1. **Power management**: K4212-ZK-E1-VB can be widely used in fields such as high-efficiency switching power supplies, DC-DC converters and power adapters, ensuring high current output at low voltage, thereby achieving higher energy efficiency.

2. **Motor drive**: This MOSFET is particularly important in motor control systems and is suitable for use in devices such as home appliances, power tools and robots to achieve precise control and high efficiency and reduce power consumption.

3. **LED drive circuit**: Due to its low on-resistance, K4212 is also suitable for use in LED drive circuits, which can stably control current, provide higher brightness and longer service life.

4. **Computers and consumer electronics**: In various consumer electronic devices such as laptops, smartphones and gaming devices, K4212 can be used as a power management component to improve system efficiency and extend battery life.

5. **Portable devices**: The small TO-252 package makes the K4212-ZK-E1-VB an ideal choice for portable devices, capable of handling high currents in a compact space while keeping heat generation low, improving the overall performance and reliability of the device.

In summary, the K4212-ZK-E1-VB has become an indispensable MOSFET solution for a variety of high-efficiency applications with its excellent electrical performance and superior heat dissipation capabilities. Whether in power management, drive control, or in portable electronic devices, it can play an important role.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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