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K4212A-ZK-E1-AY-VB Product details
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1. Product Introduction
K4212A-ZK-E1-AY-VB is a highly efficient N-channel power MOSFET that uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)), thereby improving energy efficiency and reducing power consumption. It uses a TO252 package, has a drain-source voltage (VDS) of 30V and a continuous drain current capability of up to 80A, suitable for applications that require high current handling and efficient switching. Its ±20V gate-source voltage (VGS) provides a large operating voltage range, and the Vth threshold voltage is 1.7V, ensuring good switching performance at low voltage.
K4212A-ZK-E1-AY-VB is a highly efficient N-channel power MOSFET that uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)), thereby improving energy efficiency and reducing power consumption. It uses a TO252 package, has a drain-source voltage (VDS) of 30V and a continuous drain current capability of up to 80A, suitable for applications that require high current handling and efficient switching. Its ±20V gate-source voltage (VGS) provides a large operating voltage range, and the Vth threshold voltage is 1.7V, ensuring good switching performance at low voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Other performance**: The device has fast switching speed and low gate charge characteristics, which is very suitable for high-frequency applications.
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Other performance**: The device has fast switching speed and low gate charge characteristics, which is very suitable for high-frequency applications.
Domain and module applications：
3. Application fields and modules
K4212A-ZK-E1-AY-VB has excellent current handling capability and low on-resistance, so it is suitable for the following fields and modules:
1. **Power management system**: It is particularly suitable for DC-DC converters (DC-DC converters) for efficient voltage regulation and power conversion. Its low on-resistance helps reduce losses and improve overall energy efficiency, especially in scenarios with high energy efficiency requirements such as portable devices and power tools.
2. **Motor control system**: This MOSFET is capable of handling currents up to 80A and is very suitable for use as a switching element in motor drives, especially in motor applications requiring high currents, such as industrial automation equipment, electric vehicles, etc.
3. **Automotive electronics**: The high reliability and strong current handling capability of K4212A make it suitable for power distribution modules (PDM) and battery management systems (BMS) in the automotive field, ensuring stable performance under harsh environmental conditions.
4. **Consumer Electronics**: In devices that require efficient and fast switching, such as charging circuits for laptops, smartphones, and tablets, the K4212A can reduce switching losses and provide fast response times.
This MOSFET has significant advantages in applications with high power density and low energy consumption, and can provide efficient power conversion and management solutions in many fields.
K4212A-ZK-E1-AY-VB has excellent current handling capability and low on-resistance, so it is suitable for the following fields and modules:
1. **Power management system**: It is particularly suitable for DC-DC converters (DC-DC converters) for efficient voltage regulation and power conversion. Its low on-resistance helps reduce losses and improve overall energy efficiency, especially in scenarios with high energy efficiency requirements such as portable devices and power tools.
2. **Motor control system**: This MOSFET is capable of handling currents up to 80A and is very suitable for use as a switching element in motor drives, especially in motor applications requiring high currents, such as industrial automation equipment, electric vehicles, etc.
3. **Automotive electronics**: The high reliability and strong current handling capability of K4212A make it suitable for power distribution modules (PDM) and battery management systems (BMS) in the automotive field, ensuring stable performance under harsh environmental conditions.
4. **Consumer Electronics**: In devices that require efficient and fast switching, such as charging circuits for laptops, smartphones, and tablets, the K4212A can reduce switching losses and provide fast response times.
This MOSFET has significant advantages in applications with high power density and low energy consumption, and can provide efficient power conversion and management solutions in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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