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K4207-VB Product details
Back to previous pageProduct introduction：
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K4207-VB is a single N-channel MOSFET in TO3P package with a high breakdown voltage of 900V, designed for high voltage and high power applications. This MOSFET uses advanced Super Junction (SJ) multi-epitaxial technology (Multi-EPI), which can provide excellent performance in high voltage environments, significantly reduce conduction losses, and improve system efficiency. Its on-resistance is 750mΩ, and it can carry a drain current of 9A at VGS=10V, making it an ideal choice for high voltage switching applications.
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K4207-VB is a single N-channel MOSFET in TO3P package with a high breakdown voltage of 900V, designed for high voltage and high power applications. This MOSFET uses advanced Super Junction (SJ) multi-epitaxial technology (Multi-EPI), which can provide excellent performance in high voltage environments, significantly reduce conduction losses, and improve system efficiency. Its on-resistance is 750mΩ, and it can carry a drain current of 9A at VGS=10V, making it an ideal choice for high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
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- **Package type**: TO3P
- **Polarity**: Single N-channel
- **Breakdown voltage (VDS)**: 900V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology process**: Super junction multi-epitaxial technology (SJ_Multi-EPI)
**
- **Package type**: TO3P
- **Polarity**: Single N-channel
- **Breakdown voltage (VDS)**: 900V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology process**: Super junction multi-epitaxial technology (SJ_Multi-EPI)
**
Domain and module applications：
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1. **High-voltage inverter**: With its high breakdown voltage of 900V, the K4207-VB is ideally suited for use in high-voltage inverters, such as solar inverters and wind power generation systems. In these applications, it can effectively convert high-voltage DC to AC, ensuring high efficiency and stability.
2. **Electric vehicle charger**: In the charging piles and on-board chargers of electric vehicles, this MOSFET can be used in the high-voltage power conversion part to ensure the safety and efficiency of the charging process. Its super junction technology ensures low power loss under high voltage conditions, making it a key component in the power management system of electric vehicles.
3. **Switching power supply (SMPS)**: The K4207-VB is suitable for high-voltage switching power supply systems, especially high-power industrial power supply equipment. Its high voltage carrying capacity and low on-resistance can maintain low heat loss while maintaining efficient energy transmission, improving the overall efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**: K4207-VB is also suitable for the high-voltage power conversion part of the UPS system, ensuring reliable power output when the power is interrupted to maintain the normal operation of the system. Its 9A current carrying capacity can meet the needs of most high-power UPS systems.
K4207-VB is widely used in various high-voltage and high-power occasions with its high breakdown voltage, low on-resistance and multiple epitaxial technology. It is an ideal device for improving energy efficiency and stability.
1. **High-voltage inverter**: With its high breakdown voltage of 900V, the K4207-VB is ideally suited for use in high-voltage inverters, such as solar inverters and wind power generation systems. In these applications, it can effectively convert high-voltage DC to AC, ensuring high efficiency and stability.
2. **Electric vehicle charger**: In the charging piles and on-board chargers of electric vehicles, this MOSFET can be used in the high-voltage power conversion part to ensure the safety and efficiency of the charging process. Its super junction technology ensures low power loss under high voltage conditions, making it a key component in the power management system of electric vehicles.
3. **Switching power supply (SMPS)**: The K4207-VB is suitable for high-voltage switching power supply systems, especially high-power industrial power supply equipment. Its high voltage carrying capacity and low on-resistance can maintain low heat loss while maintaining efficient energy transmission, improving the overall efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**: K4207-VB is also suitable for the high-voltage power conversion part of the UPS system, ensuring reliable power output when the power is interrupted to maintain the normal operation of the system. Its 9A current carrying capacity can meet the needs of most high-power UPS systems.
K4207-VB is widely used in various high-voltage and high-power occasions with its high breakdown voltage, low on-resistance and multiple epitaxial technology. It is an ideal device for improving energy efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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