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K4178-VB Product details
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Product Introduction - K4178-VB
K4178-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed based on Trench technology. With a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 80A, this model is designed for applications that require high current handling and low on-resistance. Its on-resistance is 6mΩ (@ VGS=4.5V) and 5mΩ (@ VGS=10V), which can effectively reduce conduction losses and significantly improve power conversion efficiency, making it suitable for a variety of power management and switching applications.
K4178-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed based on Trench technology. With a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 80A, this model is designed for applications that require high current handling and low on-resistance. Its on-resistance is 6mΩ (@ VGS=4.5V) and 5mΩ (@ VGS=10V), which can effectively reduce conduction losses and significantly improve power conversion efficiency, making it suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
The high current capability and low on-resistance of K4178-VB make it excel in power conversion and switching applications, providing excellent solutions in terms of high efficiency and energy saving.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
The high current capability and low on-resistance of K4178-VB make it excel in power conversion and switching applications, providing excellent solutions in terms of high efficiency and energy saving.
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**
K4178-VB is widely used in DC-DC converters for power management and voltage conversion. Its high current handling capability and low on-resistance can effectively improve conversion efficiency and reduce power loss.
2. **Electric drive system**
In electric drive systems, K4178-VB can be used as a switching element for motor control. Its excellent on-state performance and high current resistance can support efficient drive and control of motors.
3. **LED driver**
K4178-VB is often used in LED drivers to provide stable current output. Through efficient switching performance, higher energy efficiency and longer LED life can be achieved.
4. **High-efficiency power management module**
In the power management modules of various electronic devices, K4178-VB can efficiently control power transmission and improve the overall efficiency of the system. It is suitable for applications that require high-performance power management solutions.
K4178-VB MOSFET is suitable for applications in DC-DC converters, electric drive systems, LED drivers and high-efficiency power management modules, and can effectively improve system performance and energy efficiency.
1. **DC-DC converter**
K4178-VB is widely used in DC-DC converters for power management and voltage conversion. Its high current handling capability and low on-resistance can effectively improve conversion efficiency and reduce power loss.
2. **Electric drive system**
In electric drive systems, K4178-VB can be used as a switching element for motor control. Its excellent on-state performance and high current resistance can support efficient drive and control of motors.
3. **LED driver**
K4178-VB is often used in LED drivers to provide stable current output. Through efficient switching performance, higher energy efficiency and longer LED life can be achieved.
4. **High-efficiency power management module**
In the power management modules of various electronic devices, K4178-VB can efficiently control power transmission and improve the overall efficiency of the system. It is suitable for applications that require high-performance power management solutions.
K4178-VB MOSFET is suitable for applications in DC-DC converters, electric drive systems, LED drivers and high-efficiency power management modules, and can effectively improve system performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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