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K4178-E1-AY-VB Product details
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Product Introduction:
K4178-E1-AY-VB is a single N-channel MOSFET in TO-252 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V. The turn-on voltage (Vth) of K4178 is 1.7V, and the on-resistance RDS(ON) is 6mΩ at VGS of 4.5V, and is lower at 5mΩ at VGS of 10V. The device has a maximum drain current (ID) of 80A and uses Trench technology with excellent current handling capability and switching performance, making it suitable for use in high-efficiency, low-power electronic devices.
K4178-E1-AY-VB is a single N-channel MOSFET in TO-252 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V. The turn-on voltage (Vth) of K4178 is 1.7V, and the on-resistance RDS(ON) is 6mΩ at VGS of 4.5V, and is lower at 5mΩ at VGS of 10V. The device has a maximum drain current (ID) of 80A and uses Trench technology with excellent current handling capability and switching performance, making it suitable for use in high-efficiency, low-power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO-252 (small package, suitable for high power density applications)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench technology, providing lower on-resistance and higher switching efficiency
- **Thermal performance**: TO-252 package ensures good heat dissipation capability, suitable for high current operation
- **Package type**: TO-252 (small package, suitable for high power density applications)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench technology, providing lower on-resistance and higher switching efficiency
- **Thermal performance**: TO-252 package ensures good heat dissipation capability, suitable for high current operation
Domain and module applications：
Applicable fields and modules:
1. **Power management**: K4178-E1-AY-VB can be used in high-efficiency switching power supplies and DC-DC converters, capable of handling high current at low voltage, ensuring high efficiency and low power consumption of the system.
2. **Motor drive**: This MOSFET is widely used in motor drivers, especially in power tools and household appliances, and can stably control current to ensure efficient operation and long service life of the motor.
3. **LED drive circuit**: The low on-resistance and high current capability of K4178 make it an ideal choice in LED lighting drive circuits, capable of efficiently controlling current, improving the brightness and energy efficiency of LEDs.
4. **Computers and consumer electronics**: In computer power supplies and other consumer electronic devices, K4178 can be used as a high-efficiency switching element to optimize power consumption and reduce heat, improving overall system performance.
5. **Portable devices**: Due to its small TO-252 package, this MOSFET is suitable for power management in portable devices, helping to extend battery life and improve charging efficiency.
In summary, the K4178-E1-AY-VB has become an important device in low-voltage and high-current applications with its excellent electrical performance and compact package design. It is widely used in power management, motor control, consumer electronics and other fields, promoting system efficiency and overall performance optimization.
1. **Power management**: K4178-E1-AY-VB can be used in high-efficiency switching power supplies and DC-DC converters, capable of handling high current at low voltage, ensuring high efficiency and low power consumption of the system.
2. **Motor drive**: This MOSFET is widely used in motor drivers, especially in power tools and household appliances, and can stably control current to ensure efficient operation and long service life of the motor.
3. **LED drive circuit**: The low on-resistance and high current capability of K4178 make it an ideal choice in LED lighting drive circuits, capable of efficiently controlling current, improving the brightness and energy efficiency of LEDs.
4. **Computers and consumer electronics**: In computer power supplies and other consumer electronic devices, K4178 can be used as a high-efficiency switching element to optimize power consumption and reduce heat, improving overall system performance.
5. **Portable devices**: Due to its small TO-252 package, this MOSFET is suitable for power management in portable devices, helping to extend battery life and improve charging efficiency.
In summary, the K4178-E1-AY-VB has become an important device in low-voltage and high-current applications with its excellent electrical performance and compact package design. It is widely used in power management, motor control, consumer electronics and other fields, promoting system efficiency and overall performance optimization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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