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K416S-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
K416S-VB is a single N-channel MOSFET in TO252 package, designed for medium and high current applications. The drain-source voltage (VDS) of this MOSFET reaches 60V, the gate voltage range is ±20V, and the turn-on voltage is 1.7V. It uses advanced Trench technology, which makes its on-resistance performance excellent, 85mΩ at VGS=4.5V and 73mΩ at VGS=10V. The maximum drain current is 18A, which is suitable for high-efficiency power management and switch control applications.
K416S-VB is a single N-channel MOSFET in TO252 package, designed for medium and high current applications. The drain-source voltage (VDS) of this MOSFET reaches 60V, the gate voltage range is ±20V, and the turn-on voltage is 1.7V. It uses advanced Trench technology, which makes its on-resistance performance excellent, 85mΩ at VGS=4.5V and 73mΩ at VGS=10V. The maximum drain current is 18A, which is suitable for high-efficiency power management and switch control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
K416S-VB MOSFET is widely used in various fields and modules due to its high performance and reliability:
1. **Power management**: Due to its low on-resistance and high current carrying capacity, this MOSFET is suitable for DC-DC converters and switching power supply modules (SMPS). It can effectively improve energy conversion efficiency and is suitable for various power management systems.
2. **Motor drive**: K416S-VB is suitable for use as a switching element in motor control applications. It can withstand medium currents and provide stable switching performance. It is very suitable for home appliances, power tools and motor drivers.
3. **LED drive**: This MOSFET is suitable for use in LED lighting systems, especially in drivers that require high performance and high stability. It can provide smooth current output to ensure long life and high brightness of LEDs.
4. **Charger and battery management system**: In charger and battery management modules, K416S-VB can be used as a switch control element to support an efficient charging process and ensure fast charging and safety of the battery.
In summary, K416S-VB MOSFET performs well in multiple fields such as power management, motor control, lighting, and charging systems, and is particularly suitable for electrical equipment and applications that require high efficiency and high reliability.
K416S-VB MOSFET is widely used in various fields and modules due to its high performance and reliability:
1. **Power management**: Due to its low on-resistance and high current carrying capacity, this MOSFET is suitable for DC-DC converters and switching power supply modules (SMPS). It can effectively improve energy conversion efficiency and is suitable for various power management systems.
2. **Motor drive**: K416S-VB is suitable for use as a switching element in motor control applications. It can withstand medium currents and provide stable switching performance. It is very suitable for home appliances, power tools and motor drivers.
3. **LED drive**: This MOSFET is suitable for use in LED lighting systems, especially in drivers that require high performance and high stability. It can provide smooth current output to ensure long life and high brightness of LEDs.
4. **Charger and battery management system**: In charger and battery management modules, K416S-VB can be used as a switch control element to support an efficient charging process and ensure fast charging and safety of the battery.
In summary, K416S-VB MOSFET performs well in multiple fields such as power management, motor control, lighting, and charging systems, and is particularly suitable for electrical equipment and applications that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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