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K416STL-VB Product details

Product introduction:

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K416STL-VB is a high-performance single-channel N-channel MOSFET in TO252 package, designed for medium and low voltage applications. The device has a maximum drain-source voltage (VDS) of 60V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. The on-resistance of K416STL-VB performs well at different gate voltages: 85mΩ at VGS=4.5V and even lower at 73mΩ at VGS=10V. Its maximum drain current (ID) can reach 18A. This MOSFET uses a new type of Trench technology, which can achieve lower conduction losses and higher switching speeds, making it ideal for applications such as efficient energy conversion and power management.

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**K416STL-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 18A 73mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
- **Maximum power dissipation**: The specific power dissipation depends on the heat dissipation conditions and operating environment.
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Fast switching speed and low switching losses due to Trench technology.

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Domain and module applications:

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1. **DC-DC Converter**:
K416STL-VB MOSFET is widely used in DC-DC converters, especially those that require high efficiency and low power consumption. Its low on-resistance and high current capability enable it to perform power conversion efficiently, improving the overall efficiency of the system.

2. **Battery Management System**:
In the battery management system, this MOSFET can be used to achieve efficient charging and discharging control. The fast switching characteristics of K416STL-VB help improve the efficiency of battery use and ensure safe and stable battery performance.

3. **LED Drive Circuit**:
K416STL-VB is suitable for LED drive circuits, especially in high-power LED applications. Its high current capability and low conduction loss enable it to efficiently drive LEDs, extend the life of LEDs and improve lighting efficiency.

4. **Power Tools**:
This MOSFET can be used for power management of power tools, providing reliable switching functions and efficient power transmission. The high current capability of the K416STL-VB ensures that the tool can maintain stable performance when the load changes.

5. **Portable Devices**:
The K416STL-VB is also widely used in portable electronic devices, especially in small devices that require efficient energy management. Its small package and excellent performance make it very suitable for mobile devices and consumer electronics.

In summary, the K416STL-VB MOSFET is a high-performance device suitable for medium and low voltage applications, showing excellent performance and wide application potential in many fields such as DC-DC conversion, battery management, LED driving and power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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