中文
English
K4119-VB Product details
Back to previous pageProduct introduction：
**
K4119-VB is a high-performance single-channel N-channel MOSFET in TO220F package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 650V, the maximum gate-source voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V. The on-resistance of the device is 160mΩ (@VGS=10V), and the maximum drain current can reach 20A. K4119-VB uses Super Junction Multi-EPI technology, which gives MOSFET significant advantages in low conduction loss and excellent switching characteristics, and is suitable for application scenarios such as efficient energy conversion and power management.
---
**K4119-VB
K4119-VB is a high-performance single-channel N-channel MOSFET in TO220F package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 650V, the maximum gate-source voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V. The on-resistance of the device is 160mΩ (@VGS=10V), and the maximum drain current can reach 20A. K4119-VB uses Super Junction Multi-EPI technology, which gives MOSFET significant advantages in low conduction loss and excellent switching characteristics, and is suitable for application scenarios such as efficient energy conversion and power management.
---
**K4119-VB
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
**
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- **Maximum power consumption**: Depending on the heat dissipation conditions, it can usually withstand a large power, and the specific power depends on the use environment.
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Due to the use of SJ technology, it has a faster switching speed and low switching loss.
---
**
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- **Maximum power consumption**: Depending on the heat dissipation conditions, it can usually withstand a large power, and the specific power depends on the use environment.
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Due to the use of SJ technology, it has a faster switching speed and low switching loss.
---
**
Domain and module applications：
**
1. **Power Conversion Devices**:
The K4119-VB MOSFET excels in AC-DC and DC-DC power conversion modules, and is particularly suitable for power management systems that require high efficiency and high withstand voltage. Its high withstand voltage of 650V and 160mΩ on-resistance can effectively reduce power losses and improve overall system efficiency.
2. **Electric Vehicle Charging Infrastructure**:
The K4119-VB can be used in electric vehicle charging piles and charging stations as a power switching device to provide efficient and safe power transmission. This MOSFET can handle high voltage and high current, which helps to improve charging efficiency and shorten charging time.
3. **Photovoltaic Inverters**:
In solar power generation systems, the K4119-VB is ideal for use in photovoltaic inverters, which can convert DC power into AC power. The device performs stably when operating at high voltage, which can ensure efficient energy conversion in photovoltaic systems and improve system reliability.
4. **Industrial Drive Applications**:
This MOSFET is also very suitable for industrial motor control and drive modules, especially those requiring high power output. The K4119-VB can be used as a power switch to provide reliable current control and fast response to meet the drive needs of various industrial equipment.
5. **Uninterruptible Power Supply (UPS) System**:
The K4119-VB can be used in an uninterruptible power supply (UPS) system to ensure a stable power supply during power outages or voltage fluctuations. Its high voltage and high current characteristics enable it to switch quickly at critical moments to protect equipment and systems from being affected.
In summary, the K4119-VB MOSFET is an ideal device for a variety of high-voltage and high-power applications, showing excellent performance and wide application potential in many fields such as power conversion, electric vehicle charging, photovoltaic inverters and industrial drives.
1. **Power Conversion Devices**:
The K4119-VB MOSFET excels in AC-DC and DC-DC power conversion modules, and is particularly suitable for power management systems that require high efficiency and high withstand voltage. Its high withstand voltage of 650V and 160mΩ on-resistance can effectively reduce power losses and improve overall system efficiency.
2. **Electric Vehicle Charging Infrastructure**:
The K4119-VB can be used in electric vehicle charging piles and charging stations as a power switching device to provide efficient and safe power transmission. This MOSFET can handle high voltage and high current, which helps to improve charging efficiency and shorten charging time.
3. **Photovoltaic Inverters**:
In solar power generation systems, the K4119-VB is ideal for use in photovoltaic inverters, which can convert DC power into AC power. The device performs stably when operating at high voltage, which can ensure efficient energy conversion in photovoltaic systems and improve system reliability.
4. **Industrial Drive Applications**:
This MOSFET is also very suitable for industrial motor control and drive modules, especially those requiring high power output. The K4119-VB can be used as a power switch to provide reliable current control and fast response to meet the drive needs of various industrial equipment.
5. **Uninterruptible Power Supply (UPS) System**:
The K4119-VB can be used in an uninterruptible power supply (UPS) system to ensure a stable power supply during power outages or voltage fluctuations. Its high voltage and high current characteristics enable it to switch quickly at critical moments to protect equipment and systems from being affected.
In summary, the K4119-VB MOSFET is an ideal device for a variety of high-voltage and high-power applications, showing excellent performance and wide application potential in many fields such as power conversion, electric vehicle charging, photovoltaic inverters and industrial drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
