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K4119LS-VB Product details
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K4119LS-VB MOSFET Product Introduction:
K4119LS-VB is a high voltage, single N-channel MOSFET in a TO220F package designed for high-efficiency power applications. It utilizes super junction (SJ) multi-EPI technology to achieve low on-resistance and high current capability, ensuring reliability and efficiency in high voltage and high temperature environments. The device has a drain-to-source voltage (VDS) of 650V, suitable for high-voltage power conversion systems. Its gate-to-source voltage (VGS) tolerance is ±30V, making it resistant to voltage spikes. The threshold voltage (Vth) is 3.5V, ensuring stable switching in a variety of circuits. In addition, when VGS is 10V, the device has an RDS(ON) value of 160mΩ and supports a continuous drain current (ID) of up to 20A, which is very suitable for high-power applications.
K4119LS-VB is a high voltage, single N-channel MOSFET in a TO220F package designed for high-efficiency power applications. It utilizes super junction (SJ) multi-EPI technology to achieve low on-resistance and high current capability, ensuring reliability and efficiency in high voltage and high temperature environments. The device has a drain-to-source voltage (VDS) of 650V, suitable for high-voltage power conversion systems. Its gate-to-source voltage (VGS) tolerance is ±30V, making it resistant to voltage spikes. The threshold voltage (Vth) is 3.5V, ensuring stable switching in a variety of circuits. In addition, when VGS is 10V, the device has an RDS(ON) value of 160mΩ and supports a continuous drain current (ID) of up to 20A, which is very suitable for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package:** TO220F – This package has good heat dissipation characteristics and is suitable for high power and high current applications.
2. **Configuration:** Single N channel – Makes it suitable for power switching and amplifier circuits.
3. **VDS (Drain to Source Voltage):** 650V – Allows the MOSFET to operate reliably in a high voltage environment.
4. **VGS (Gate to Source Voltage):** ±30V – Provides high voltage tolerance to prevent device damage during switching.
5. **Vth (Threshold Voltage):** 3.5V – The voltage at which conduction begins, ensuring a smooth transition in power supply design.
6. **RDS(ON) (Drain to Source On Resistance):** 160mΩ @ VGS = 10V – Low on resistance helps reduce power consumption and heat generation.
7. **ID (Continuous Drain Current):** 20A – Supports high current loads and is suitable for applications that require stable power supply.
8. **Technology:** SJ_Multi-EPI – Adopts super junction technology to provide lower on-resistance and higher switching efficiency.
1. **Package:** TO220F – This package has good heat dissipation characteristics and is suitable for high power and high current applications.
2. **Configuration:** Single N channel – Makes it suitable for power switching and amplifier circuits.
3. **VDS (Drain to Source Voltage):** 650V – Allows the MOSFET to operate reliably in a high voltage environment.
4. **VGS (Gate to Source Voltage):** ±30V – Provides high voltage tolerance to prevent device damage during switching.
5. **Vth (Threshold Voltage):** 3.5V – The voltage at which conduction begins, ensuring a smooth transition in power supply design.
6. **RDS(ON) (Drain to Source On Resistance):** 160mΩ @ VGS = 10V – Low on resistance helps reduce power consumption and heat generation.
7. **ID (Continuous Drain Current):** 20A – Supports high current loads and is suitable for applications that require stable power supply.
8. **Technology:** SJ_Multi-EPI – Adopts super junction technology to provide lower on-resistance and higher switching efficiency.
Domain and module applications：
Application Examples:
The K4119LS-VB MOSFET is widely used in multiple fields and power modules due to its high voltage capability and low on-resistance. Here are some specific application examples:
- **Switching Power Supply (SMPS):** The 650V VDS and 20A ID of this MOSFET make it ideal for switching power supplies, which can effectively perform power conversion in industrial and consumer electronic devices.
- **Solar Inverter:** In solar power generation systems, the high voltage and high efficiency provided by the K4119LS-VB support the conversion of DC to AC, thereby improving the energy efficiency of the entire system.
- **Motor Drive:** Due to its 20A current capability, this MOSFET can be used to drive medium-sized motors and is widely used in industrial automation and robotics.
- **LED Driver:** The K4119LS-VB is suitable for driver power in LED lighting systems, providing stable current and high efficiency, which helps to extend the life of lamps and reduce energy consumption.
- **Uninterruptible Power Supply (UPS):** The high voltage and high current handling capabilities of this MOSFET make it an ideal choice for use in UPS systems, ensuring reliable power support during power outages.
In summary, the K4119LS-VB MOSFET has significant value in high voltage and high efficiency power management for renewable energy, industrial control, and high power electronic devices.
The K4119LS-VB MOSFET is widely used in multiple fields and power modules due to its high voltage capability and low on-resistance. Here are some specific application examples:
- **Switching Power Supply (SMPS):** The 650V VDS and 20A ID of this MOSFET make it ideal for switching power supplies, which can effectively perform power conversion in industrial and consumer electronic devices.
- **Solar Inverter:** In solar power generation systems, the high voltage and high efficiency provided by the K4119LS-VB support the conversion of DC to AC, thereby improving the energy efficiency of the entire system.
- **Motor Drive:** Due to its 20A current capability, this MOSFET can be used to drive medium-sized motors and is widely used in industrial automation and robotics.
- **LED Driver:** The K4119LS-VB is suitable for driver power in LED lighting systems, providing stable current and high efficiency, which helps to extend the life of lamps and reduce energy consumption.
- **Uninterruptible Power Supply (UPS):** The high voltage and high current handling capabilities of this MOSFET make it an ideal choice for use in UPS systems, ensuring reliable power support during power outages.
In summary, the K4119LS-VB MOSFET has significant value in high voltage and high efficiency power management for renewable energy, industrial control, and high power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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