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K4108-VB Product details

Product introduction:

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K4108-VB is a high-voltage single-channel N-channel MOSFET in TO3P package, suitable for high-power and high-voltage applications. It has a maximum drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, a threshold voltage of 3.5V, an on-resistance of 190mΩ@VGS=10V, and a maximum drain current of 20A. K4108-VB uses Super Junction Multi-EPI technology, which can provide low conduction losses and excellent switching characteristics, and is particularly suitable for high-efficiency energy conversion and high-voltage power management.

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**K4108-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 20A 190mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
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- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epi Technology)
- **Maximum power consumption**: The specific power consumption depends on the heat dissipation conditions and can usually withstand larger power.
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Due to SJ technology, it has faster switching speed and lower switching loss.

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Domain and module applications:

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1. **Power Conversion Systems**:
K4108-VB excels in high-efficiency power conversion modules for AC-DC and DC-DC converters, especially those power management systems that require high-voltage operation. Its 600V high withstand voltage and low on-resistance can effectively reduce losses and improve power conversion efficiency.

2. **Solar Inverters**:
In photovoltaic systems, K4108-VB MOSFET can be used as a power switching device for solar inverters. It can efficiently convert DC to AC, provide reliable performance under high voltage and high power conditions, and ensure long-term stability of the system.

3. **Electric Vehicle Charging Stations and Battery Management Systems**:
Due to its 20A high current capability and 600V withstand voltage, K4108-VB is suitable for the high-voltage part of electric vehicle charging piles to ensure efficient and safe energy transmission. At the same time, it can also be used as a core component of power conversion in battery management systems to help manage the battery charging and discharging process.

4. **Industrial Drive**:
In industrial motor drive and high-power drive modules, K4108-VB can be used as a key power switching device in the drive circuit of industrial equipment due to its high current and high voltage characteristics, especially in situations where high power output is required.

5. **Uninterruptible Power Supply (UPS)**:
K4108-VB MOSFET can also be used in UPS systems, especially in modules that require high-voltage protection and efficient energy conversion, to provide stable output and fast switching functions to ensure continuous power supply to the equipment.

In summary, K4108-VB MOSFET is an ideal device for high-voltage and high-power application scenarios, and can provide excellent performance and reliability in the fields of energy conversion, industrial drive, and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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