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K4107-VB Product details
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K4107-VB MOSFET Product Introduction:
K4107-VB is a high-voltage single N-channel MOSFET in a TO3P package, designed for power applications that require high efficiency and low switching losses. It uses super junction (SJ) multi-EPI technology to provide a balance of performance and energy efficiency. The device has a drain-to-source voltage (VDS) of 600V and is suitable for high-voltage power conversion systems. It has a gate-to-source voltage (VGS) tolerance of ±30V, which gives it good immunity to voltage spikes. The threshold voltage (Vth) is 3.5V, ensuring stable operation in various circuits. In addition, when VGS is 10V, the device's RDS(ON) value is 280mΩ, supporting a continuous drain current (ID) of 15A.
K4107-VB is a high-voltage single N-channel MOSFET in a TO3P package, designed for power applications that require high efficiency and low switching losses. It uses super junction (SJ) multi-EPI technology to provide a balance of performance and energy efficiency. The device has a drain-to-source voltage (VDS) of 600V and is suitable for high-voltage power conversion systems. It has a gate-to-source voltage (VGS) tolerance of ±30V, which gives it good immunity to voltage spikes. The threshold voltage (Vth) is 3.5V, ensuring stable operation in various circuits. In addition, when VGS is 10V, the device's RDS(ON) value is 280mΩ, supporting a continuous drain current (ID) of 15A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
1. **Package:** TO3P – Known for its rugged mechanical structure and good heat dissipation, it is suitable for high-power applications.
2. **Configuration:** Single N-channel – The MOSFET adopts a single N-channel configuration, which is suitable for switching and amplification tasks in power circuits.
3. **VDS (Drain to Source Voltage):** 600V – Allows the MOSFET to handle high-voltage circuits efficiently.
4. **VGS (Gate to Source Voltage):** ±30V – High gate tolerance helps manage voltage spikes and protect the device during switching.
5. **Vth (Threshold Voltage):** 3.5V – The voltage at which the MOSFET starts to turn on, ensuring a smooth transition in various power designs.
6. **RDS(ON) (Drain-Source On Resistance):** 280mΩ @ VGS = 10V – Low on-resistance helps reduce conduction losses and heat generation.
7. **ID (Continuous Drain Current):** 15A – Supports high current loads for applications that require continuous power.
8. **Technology:** SJ_Multi-EPI – Superjunction technology improves performance, providing lower on-resistance, reduced gate charge and higher efficiency, especially in high voltage power systems.
1. **Package:** TO3P – Known for its rugged mechanical structure and good heat dissipation, it is suitable for high-power applications.
2. **Configuration:** Single N-channel – The MOSFET adopts a single N-channel configuration, which is suitable for switching and amplification tasks in power circuits.
3. **VDS (Drain to Source Voltage):** 600V – Allows the MOSFET to handle high-voltage circuits efficiently.
4. **VGS (Gate to Source Voltage):** ±30V – High gate tolerance helps manage voltage spikes and protect the device during switching.
5. **Vth (Threshold Voltage):** 3.5V – The voltage at which the MOSFET starts to turn on, ensuring a smooth transition in various power designs.
6. **RDS(ON) (Drain-Source On Resistance):** 280mΩ @ VGS = 10V – Low on-resistance helps reduce conduction losses and heat generation.
7. **ID (Continuous Drain Current):** 15A – Supports high current loads for applications that require continuous power.
8. **Technology:** SJ_Multi-EPI – Superjunction technology improves performance, providing lower on-resistance, reduced gate charge and higher efficiency, especially in high voltage power systems.
Domain and module applications：
Application Examples:
The K4107-VB MOSFET is widely used in various fields and power modules due to its high voltage capability, low RDS(ON) and high efficiency. Here are some example applications:
- **Switching Power Supply (SMPS):** The 600V VDS rating and low on-resistance make it ideal for use in switching power supplies, providing efficient power conversion for industrial and consumer electronics.
- **Solar Inverter:** In solar systems, the high voltage capability and high efficiency of the MOSFET are critical to converting the DC power generated by solar panels into AC power for the grid.
- **Uninterruptible Power Supply (UPS):** The high voltage tolerance and ability to handle large currents make this MOSFET suitable for use in UPS systems, where reliable power supply is critical.
- **Motor Drive:** With its 15A current capacity, the K4107-VB can drive medium to large motors in industrial automation and robotics applications.
- **Lighting Ballasts:** Its high voltage rating makes it ideal for controlling power in electronic ballasts in fluorescent and high-intensity discharge lamp systems.
Optimized for high-voltage, high-efficiency power management, this MOSFET is valuable in renewable energy, industrial automation, and power systems.
The K4107-VB MOSFET is widely used in various fields and power modules due to its high voltage capability, low RDS(ON) and high efficiency. Here are some example applications:
- **Switching Power Supply (SMPS):** The 600V VDS rating and low on-resistance make it ideal for use in switching power supplies, providing efficient power conversion for industrial and consumer electronics.
- **Solar Inverter:** In solar systems, the high voltage capability and high efficiency of the MOSFET are critical to converting the DC power generated by solar panels into AC power for the grid.
- **Uninterruptible Power Supply (UPS):** The high voltage tolerance and ability to handle large currents make this MOSFET suitable for use in UPS systems, where reliable power supply is critical.
- **Motor Drive:** With its 15A current capacity, the K4107-VB can drive medium to large motors in industrial automation and robotics applications.
- **Lighting Ballasts:** Its high voltage rating makes it ideal for controlling power in electronic ballasts in fluorescent and high-intensity discharge lamp systems.
Optimized for high-voltage, high-efficiency power management, this MOSFET is valuable in renewable energy, industrial automation, and power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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