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K4101FG-VB Product details
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K4101FG-VB Product Introduction
The K4101FG-VB is a high voltage N-channel MOSFET in a TO220F package, designed for applications requiring high withstand voltage and low on-resistance. With a high drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device is suitable for high power and high voltage power conversion and switching applications. Its threshold voltage (Vth) is 3.5V, and it can be turned on at a lower gate voltage. The RDS(ON) of this MOSFET is 830mΩ @ VGS = 10V, which makes it have low power consumption characteristics when turned on, improving the efficiency of the overall system.
The K4101FG-VB is a high voltage N-channel MOSFET in a TO220F package, designed for applications requiring high withstand voltage and low on-resistance. With a high drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device is suitable for high power and high voltage power conversion and switching applications. Its threshold voltage (Vth) is 3.5V, and it can be turned on at a lower gate voltage. The RDS(ON) of this MOSFET is 830mΩ @ VGS = 10V, which makes it have low power consumption characteristics when turned on, improving the efficiency of the overall system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
| Parameter| Description|
|---------------------|----------------------------------|
| **Model** | K4101FG-VB |
| **Package** | TO220F |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 830mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 10A |
| **Technology** | Planar technology|
| Parameter| Description|
|---------------------|----------------------------------|
| **Model** | K4101FG-VB |
| **Package** | TO220F |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 830mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 10A |
| **Technology** | Planar technology|
Domain and module applications：
Application Fields and Module Examples
K4101FG-VB MOSFET is suitable for a variety of fields and modules, including but not limited to:
1. **Power Management**: Due to its high voltage and low on-resistance characteristics, K4101FG-VB can be used in switching power supplies and DC-DC converters to improve energy efficiency and reduce heat generation.
2. **Motor Control**: In motor drive and control systems, this MOSFET can be used in high-voltage motor control circuits to ensure the stability and efficiency of motor starting and operation.
3. **Inverter**: In solar inverters and uninterruptible power supply (UPS) systems, K4101FG-VB can effectively handle voltage fluctuations and ensure system reliability due to its high withstand voltage characteristics.
4. **High Frequency Switching**: This device can be applied to high-frequency switching circuits such as RF amplifiers and radio transmitters, providing good switching characteristics and performance.
Through the above applications, K4101FG-VB MOSFET can play an important role in systems requiring high voltage and high efficiency, providing stable performance guarantee for modern electronic devices.
K4101FG-VB MOSFET is suitable for a variety of fields and modules, including but not limited to:
1. **Power Management**: Due to its high voltage and low on-resistance characteristics, K4101FG-VB can be used in switching power supplies and DC-DC converters to improve energy efficiency and reduce heat generation.
2. **Motor Control**: In motor drive and control systems, this MOSFET can be used in high-voltage motor control circuits to ensure the stability and efficiency of motor starting and operation.
3. **Inverter**: In solar inverters and uninterruptible power supply (UPS) systems, K4101FG-VB can effectively handle voltage fluctuations and ensure system reliability due to its high withstand voltage characteristics.
4. **High Frequency Switching**: This device can be applied to high-frequency switching circuits such as RF amplifiers and radio transmitters, providing good switching characteristics and performance.
Through the above applications, K4101FG-VB MOSFET can play an important role in systems requiring high voltage and high efficiency, providing stable performance guarantee for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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