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K40S10K3Z-VB Product details
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K40S10K3Z-VB MOSFET Product Introduction:
**K40S10K3Z-VB** is an N-channel MOSFET designed for high-efficiency switching applications. Its maximum drain-source voltage (**VDS**) is **100V**, and the gate-source voltage (**VGS**) is rated at **±20V**, which is suitable for a variety of power management and control systems. The threshold voltage (**Vth**) of this MOSFET is **1.8V**, ensuring fast switching performance under low gate drive requirements. The device has a low **RDS(ON)** value of **18mΩ @ VGS=10V**, supports high current handling and has low conduction losses, and is suitable for applications with a maximum drain current (**ID**) of **45A**. Based on Trench technology, K40S10K3Z-VB provides excellent thermal performance and fast switching characteristics.
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**K40S10K3Z-VB** is an N-channel MOSFET designed for high-efficiency switching applications. Its maximum drain-source voltage (**VDS**) is **100V**, and the gate-source voltage (**VGS**) is rated at **±20V**, which is suitable for a variety of power management and control systems. The threshold voltage (**Vth**) of this MOSFET is **1.8V**, ensuring fast switching performance under low gate drive requirements. The device has a low **RDS(ON)** value of **18mΩ @ VGS=10V**, supports high current handling and has low conduction losses, and is suitable for applications with a maximum drain current (**ID**) of **45A**. Based on Trench technology, K40S10K3Z-VB provides excellent thermal performance and fast switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
K40S10K3Z-VB Detailed parameter description:
- **Package**: TO252 (DPAK)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (typical)
- **Drain current (ID)**: 45A
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Technology**: Trench technology
- **Gate charge (Qg)**: Low, supports fast switching speed
- **Maximum power consumption**: High, with good heat dissipation capability
- **Operating temperature range**: Typically -55°C to +175°C
- **Switching speed**: High, suitable for fast switching applications
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- **Package**: TO252 (DPAK)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (typical)
- **Drain current (ID)**: 45A
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Technology**: Trench technology
- **Gate charge (Qg)**: Low, supports fast switching speed
- **Maximum power consumption**: High, with good heat dissipation capability
- **Operating temperature range**: Typically -55°C to +175°C
- **Switching speed**: High, suitable for fast switching applications
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Domain and module applications：
Application areas and modules of K40S10K3Z-VB:
1. **Power modules**: The low on-resistance and fast switching capability of K40S10K3Z-VB make it ideal for use in **DC-DC converters**, **AC-DC power supplies** and **switch mode power supplies (SMPS)**. These applications require high efficiency in power conversion and the ability to handle large currents without generating excessive heat.
2. **Motor control systems**: With high current and high voltage handling capabilities, this MOSFET is ideal for **motor drivers** and **controllers** in equipment such as industrial motors, electric vehicles and robots, which require precise control of the speed and direction of the motor.
3. **Battery management system (BMS)**: In electric vehicles, energy storage systems and portable electronic devices, K40S10K3Z-VB can be used in **battery protection circuits**. Its high current handling capability and low loss characteristics make it ideal for **charging and discharging control** in these systems.
4. **Lighting systems**: Fast switching speeds and low conduction losses make it suitable for efficient current regulation and dimming control in **LED drivers** and **high-intensity lighting systems**.
5. **Telecom equipment**: This MOSFET can also be used in **RF power amplifiers** and **telecom power supplies**, which require fast and efficient power switching to minimize power losses and ensure stable signal transmission.
By providing fast switching speeds, low on-resistance, and high current handling capability, the K40S10K3Z-VB is suitable for a variety of applications requiring efficient and reliable power control.
1. **Power modules**: The low on-resistance and fast switching capability of K40S10K3Z-VB make it ideal for use in **DC-DC converters**, **AC-DC power supplies** and **switch mode power supplies (SMPS)**. These applications require high efficiency in power conversion and the ability to handle large currents without generating excessive heat.
2. **Motor control systems**: With high current and high voltage handling capabilities, this MOSFET is ideal for **motor drivers** and **controllers** in equipment such as industrial motors, electric vehicles and robots, which require precise control of the speed and direction of the motor.
3. **Battery management system (BMS)**: In electric vehicles, energy storage systems and portable electronic devices, K40S10K3Z-VB can be used in **battery protection circuits**. Its high current handling capability and low loss characteristics make it ideal for **charging and discharging control** in these systems.
4. **Lighting systems**: Fast switching speeds and low conduction losses make it suitable for efficient current regulation and dimming control in **LED drivers** and **high-intensity lighting systems**.
5. **Telecom equipment**: This MOSFET can also be used in **RF power amplifiers** and **telecom power supplies**, which require fast and efficient power switching to minimize power losses and ensure stable signal transmission.
By providing fast switching speeds, low on-resistance, and high current handling capability, the K40S10K3Z-VB is suitable for a variety of applications requiring efficient and reliable power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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