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K40P04M1-VB Product details
Back to previous pageProduct introduction：
：**
K40P04M1-VB is a single N-channel MOSFET in TO252 package, with high performance and low on-resistance, especially suitable for low voltage and high current applications. The design of this MOSFET adopts advanced Trench process technology, which effectively improves its switching performance and conduction efficiency, while reducing power loss, making it outstanding in high performance and reliability.
**
K40P04M1-VB is a single N-channel MOSFET in TO252 package, with high performance and low on-resistance, especially suitable for low voltage and high current applications. The design of this MOSFET adopts advanced Trench process technology, which effectively improves its switching performance and conduction efficiency, while reducing power loss, making it outstanding in high performance and reliability.
**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
：**
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Breakdown voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology process**: Trench
**
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Breakdown voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology process**: Trench
**
Domain and module applications：
：**
1. **Automotive electronics**: The K40P04M1-VB is suitable for power management and electric equipment control modules in automotive electronic systems. Its low on-resistance and high current carrying capacity enable it to efficiently transmit and convert power in modules such as automotive power windows and electronic power steering systems.
2. **Motor control**: This MOSFET can be used in industrial or household motor drive circuits, especially in low-voltage and high-current environments, such as brushless DC motor (BLDC) control. Its efficient switching characteristics can reduce losses in motor control and improve the overall energy efficiency of the system.
3. **DC-DC converter**: Due to its low conduction losses and high current handling capability, the K40P04M1-VB performs well in step-down (buck) and step-up (boost) DC-DC converters, enabling efficient energy conversion, and is suitable for portable devices or data center power management modules.
4. **Battery Management System (BMS)**: In battery charge and discharge management, this MOSFET can be used in high-power battery management modules, such as protection and charge and discharge management of lithium-ion batteries, due to its high current handling capability and low power consumption.
With these features, the K40P04M1-VB performs well in power control applications that require high efficiency and reliability, and is widely used in multiple industries.
1. **Automotive electronics**: The K40P04M1-VB is suitable for power management and electric equipment control modules in automotive electronic systems. Its low on-resistance and high current carrying capacity enable it to efficiently transmit and convert power in modules such as automotive power windows and electronic power steering systems.
2. **Motor control**: This MOSFET can be used in industrial or household motor drive circuits, especially in low-voltage and high-current environments, such as brushless DC motor (BLDC) control. Its efficient switching characteristics can reduce losses in motor control and improve the overall energy efficiency of the system.
3. **DC-DC converter**: Due to its low conduction losses and high current handling capability, the K40P04M1-VB performs well in step-down (buck) and step-up (boost) DC-DC converters, enabling efficient energy conversion, and is suitable for portable devices or data center power management modules.
4. **Battery Management System (BMS)**: In battery charge and discharge management, this MOSFET can be used in high-power battery management modules, such as protection and charge and discharge management of lithium-ion batteries, due to its high current handling capability and low power consumption.
With these features, the K40P04M1-VB performs well in power control applications that require high efficiency and reliability, and is widely used in multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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