K40N30L-VB Product details
Product introduction:
The K40N30L-VB is a single N-channel MOSFET in a TO247 package, mainly suitable for high-voltage applications. It has a drain-source voltage (VDS) of 650V, which enables it to withstand higher voltages and is suitable for operation in harsh environments. The use of SJ (super junction) multi-epitaxial technology greatly reduces the on-resistance (RDS(ON)) and improves the overall efficiency. The device has a wide gate voltage (VGS) tolerance range of ±30V, has excellent voltage resistance and thermal stability, and can support higher current requirements. Its on-resistance is 75mΩ@VGS=10V and the maximum continuous drain current is 47A, which is suitable for various power conversion and high-efficiency power control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ@VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-epitaxial structure
- **Maximum power dissipation (Pd)**: 400W (typical, depends on operating conditions)
- **Reverse recovery time (trr)**: Short, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
- **Breakdown voltage**: Up to 650V, suitable for high voltage environment
Domain and module applications:
1. **PV Inverters**
The K40N30L-VB's 650V high withstand voltage and 47A high current capability make it ideal for use in PV inverters. These inverters require efficient and stable power conversion components when converting DC power from solar panels to AC power. Its low on-resistance helps reduce power losses, thereby improving overall system efficiency.
2. **Switching Power Supply (SMPS)**
In high-frequency switching power supplies, the K40N30L-VB can effectively handle high voltages, while its fast switching performance can reduce switching losses in power conversion, making it widely used in modules such as server power supplies, industrial power supplies, and communication power supplies.
3. **EV Chargers**
Due to its excellent on-resistance and high current handling capabilities, this MOSFET is suitable for high-efficiency charging modules for electric vehicles. In this application, it is critical to be able to efficiently convert and transmit energy, and the K40N30L-VB provides sufficient voltage and current margin to ensure efficient and stable operation of the charger.
4. **Inverter Welders**
The K40N30L-VB can withstand extremely high transient currents, making it an ideal power switching device in inverter welders. Inverter welders need to operate stably under high loads and frequent switching operations, and the high current capability and low loss characteristics of the K40N30L-VB can meet these requirements.
5. **Uninterruptible Power Supply (UPS)**
In UPS systems, especially those in high-end data centers and industrial applications, the high voltage and high current characteristics of the K40N30L-VB enable it to provide efficient and reliable power management during the energy conversion process, thereby ensuring the continuity and safety of power supply.
This MOSFET has broad application prospects in the field of high-power and high-efficiency energy conversion, especially in scenarios where high voltage and high current need to be processed, providing excellent performance and reliability.
Technical support:
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