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K40D10J1-VB Product details

Product introduction:

1. K40D10J1-VB MOSFET Product Introduction

K40D10J1-VB is a single N-channel MOSFET in TO220 package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its turn-on threshold voltage is 2.5V, and its on-resistance at different gate drive voltages is 20mΩ (@VGS=4.5V) and 9mΩ (@VGS=10V), respectively, with a maximum current of up to 100A. The device uses advanced trench technology to provide excellent conduction performance and low on-resistance under high current conditions, making it very suitable for efficient power conversion and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 2.5V 100A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. K40D10J1-VB MOSFET Detailed parameter description

- **Package type**: TO220
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Package size**: Standard TO220 package, suitable for heat sink installation

Domain and module applications:

3. Application fields and modules of K40D10J1-VB MOSFET

1. **Motor drive**
K40D10J1-VB is very suitable for use in motor drive applications due to its high current capability and low on-resistance, especially industrial motors or electric vehicle motors that need to handle high currents. Such applications require MOSFETs to provide low-loss and efficient power transmission, and K40D10J1-VB just meets this need.

2. **DC-DC converter**
This MOSFET is also commonly used in DC-DC converter modules, especially in scenarios that require high power conversion efficiency. Its lower on-resistance can reduce switching losses, thereby improving the energy efficiency of the overall circuit, and is widely used in data centers, power management systems and other fields.

3. **Battery Management System (BMS)**
In the battery management system of electric vehicles or energy storage systems, K40D10J1-VB can be used as a protection switch for the battery or a power switch for controlling battery charging/discharging. Due to its high current handling capability and withstand voltage characteristics, it is able to manage the energy flow in the battery well, ensuring the safety and long life of the battery.

4. **Photovoltaic inverter**
The inverter module of the photovoltaic system requires efficient power switches to convert DC power into AC power. The K40D10J1-VB can be used as the main switching device in this occasion, ensuring conversion efficiency under high power conditions while having good thermal management capabilities.

5. **Automotive electronics**
The high voltage and high current capabilities of this MOSFET make it very suitable for applications in automotive electronics, such as electric power steering systems (EPS), on-board chargers, and high-power switching devices in electric vehicles.

In short, the K40D10J1-VB is widely used in various fields that require efficient energy conversion and high current handling with its strong electrical performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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